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Barnes, B. M., Li, Z., Savage, D. E., Wiedemann, E., Lagally, M. G. (2004) Quantifying the thickness of magnetically active layers using x-ray resonant magnetic scattering. Journal of Applied Physics, 95 (11). 6654-6656 doi:10.1063/1.1667868

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Reference TypeJournal (article/letter/editorial)
TitleQuantifying the thickness of magnetically active layers using x-ray resonant magnetic scattering
JournalJournal of Applied Physics
AuthorsBarnes, B. M.Author
Li, Z.Author
Savage, D. E.Author
Wiedemann, E.Author
Lagally, M. G.Author
Year2004 (June)Volume95
Issue11
PublisherAIP Publishing
DOIdoi:10.1063/1.1667868Search in ResearchGate
Generate Citation Formats
Mindat Ref. ID5124480Long-form Identifiermindat:1:5:5124480:4
GUID0
Full ReferenceBarnes, B. M., Li, Z., Savage, D. E., Wiedemann, E., Lagally, M. G. (2004) Quantifying the thickness of magnetically active layers using x-ray resonant magnetic scattering. Journal of Applied Physics, 95 (11). 6654-6656 doi:10.1063/1.1667868
Plain TextBarnes, B. M., Li, Z., Savage, D. E., Wiedemann, E., Lagally, M. G. (2004) Quantifying the thickness of magnetically active layers using x-ray resonant magnetic scattering. Journal of Applied Physics, 95 (11). 6654-6656 doi:10.1063/1.1667868
In(2004, June) Journal of Applied Physics Vol. 95 (11) AIP Publishing

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Kelly, J. J., Barnes, B. M., Flack, F., Lagally, D. P., Savage, D. E., Friesen, M., Lagally, M. G. (2002) Comparison of magnetic- and chemical-boundary roughness in magnetic films and multilayers. Journal of Applied Physics, 91 (12). 9978pp. doi:10.1063/1.1478142
MacKay, J. F., Teichert, C., Savage, D. E., Lagally, M. G. (1996) Element Specific Magnetization of Buried Interfaces Probed by Diffuse X-Ray Resonant Magnetic Scattering. Physical Review Letters, 77 (18). 3925-3928 doi:10.1103/physrevlett.77.3925
MacKay, J. F., Teichert, C., Lagally, M. G. (1997) Direct observation of interface roughness dependence of interfacial magnetism using diffuse x-ray resonant magnetic scattering (abstract). Journal of Applied Physics, 81 (8). 4353 doi:10.1063/1.364767
Teichert, C., MacKay, J. F., Savage, D. E., Lagally, M. G., Brohl, M., Wagner, P. (1995) Comparison of surface roughness of polished silicon wafers measured by light scattering topography, soft‐x‐ray scattering, and atomic‐force microscopy. Applied Physics Letters, 66 (18). 2346-2348 doi:10.1063/1.113978
Phang, Y. H., Savage, D. E., Kariotis, R., Lagally, M. G. (1993) X‐ray diffraction measurement of partially correlated interfacial roughness in multilayers. Journal of Applied Physics, 74 (5). 3181-3188 doi:10.1063/1.354588
Yang, B., Marcus, M. S., Keppel, D. G., Zhang, P. P., Li, Z. W., Larson, B. J., Savage, D. E., Simmons, J. M., Castellini, O. M., Eriksson, M. A., Lagally, M. G. (2005) Template-directed carbon nanotube network using self-organized Si nanocrystals. Applied Physics Letters, 86 (26). 263107pp. doi:10.1063/1.1952585
Savage, D. E., Phang, Y.‐H., Rownd, J. J., MacKay, J. F., Lagally, M. G. (1993) Determination of interfacial roughness correlation in W/C multilayer films: Comparison using soft and hard x‐ray diffraction. Journal of Applied Physics, 74 (10). 6158-6164 doi:10.1063/1.355182
Savage, D. E., Kleiner, J., Schimke, N., Phang, Y.‐H., Jankowski, T., Jacobs, J., Kariotis, R., Lagally, M. G. (1991) Determination of roughness correlations in multilayer films for x‐ray mirrors. Journal of Applied Physics, 69 (3). 1411-1424 doi:10.1063/1.347281
Phang, Y. H., Kariotis, R., Savage, D. E., Lagally, M. G. (1992) Diffraction from multilayer films with partially correlated interfacial roughness. Journal of Applied Physics, 72 (10). 4627-4633 doi:10.1063/1.352116
Phang, Y. H., Savage, D. E., Kuech, T. F., Lagally, M. G., Park, J. S., Wang, K. L. (1992) X‐ray diffraction determination of interfacial roughness correlation in SixGe1−x/Si and GaAs/AlxGa1−xAs superlattices. Applied Physics Letters, 60 (24). 2986-2988 doi:10.1063/1.106784
Kawakami, E., Scarlino, P., Schreiber, L. R., Prance, J. R., Savage, D. E., Lagally, M. G., Eriksson, M. A., Vandersypen, L. M. K. (2013) Excitation of a Si/SiGe quantum dot using an on-chip microwave antenna. Applied Physics Letters, 103 (13). 132410pp. doi:10.1063/1.4821995
 
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