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Schroeder, T. W., Engstrom, J. R. (2004) The nucleation and growth of silicon thin films on silicate glasses of variable composition using supersonic gas source molecular beam deposition. Journal of Applied Physics, 95 (11). 6470-6479 doi:10.1063/1.1728287

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Reference TypeJournal (article/letter/editorial)
TitleThe nucleation and growth of silicon thin films on silicate glasses of variable composition using supersonic gas source molecular beam deposition
JournalJournal of Applied Physics
AuthorsSchroeder, T. W.Author
Engstrom, J. R.Author
Year2004 (June)Volume95
Issue11
PublisherAIP Publishing
DOIdoi:10.1063/1.1728287Search in ResearchGate
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Mindat Ref. ID5125087Long-form Identifiermindat:1:5:5125087:8
GUID0
Full ReferenceSchroeder, T. W., Engstrom, J. R. (2004) The nucleation and growth of silicon thin films on silicate glasses of variable composition using supersonic gas source molecular beam deposition. Journal of Applied Physics, 95 (11). 6470-6479 doi:10.1063/1.1728287
Plain TextSchroeder, T. W., Engstrom, J. R. (2004) The nucleation and growth of silicon thin films on silicate glasses of variable composition using supersonic gas source molecular beam deposition. Journal of Applied Physics, 95 (11). 6470-6479 doi:10.1063/1.1728287
In(2004, June) Journal of Applied Physics Vol. 95 (11) AIP Publishing

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Killampalli, Aravind S., Engstrom, J. R. (2006) Nucleation of pentacene thin films on silicon dioxide modified with hexamethyldisilazane. Applied Physics Letters, 88 (14). 143125pp. doi:10.1063/1.2182012
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Lee, Doohan, Blakely, Jack M., Schroeder, Todd W., Engstrom, J. R. (2001) A growth method for creating arrays of atomically flat mesas on silicon. Applied Physics Letters, 78 (10). 1349-1351 doi:10.1063/1.1352656
Tanaka, Satoru, Kern, R. Scott, Davis, Robert F. (1994) Effects of gas flow ratio on silicon carbide thin film growth mode and polytype formation during gasā€source molecular beam epitaxy. Applied Physics Letters, 65 (22). 2851-2853 doi:10.1063/1.112513
Bean, J. C. (1980) Growth of thin silicon films on sapphire and spinel by molecular beam epitaxy. Applied Physics Letters, 36 (9). 741-743 doi:10.1063/1.91634
Kern, R. S., Davis, R. F. (1997) Deposition and doping of silicon carbide by gas-source molecular beam epitaxy. Applied Physics Letters, 71 (10). 1356-1358 doi:10.1063/1.119892
Voorhoeve, R. J. H., Carides, J. N., Wagner, R. S. (1972) Kinetics and thermodynamics of thinā€film deposition by molecular beam methods. II. Nucleation, growth, and evaporation of cadmium on germanium single crystals. Journal of Applied Physics, 43 (12). 4886-4900 doi:10.1063/1.1661042
Koh, Joohyun, Fujiwara, H., Koval, R. J., Wronski, C. R., Collins, R. W. (1999) Real time spectroscopic ellipsometry studies of the nucleation and growth of p-type microcrystalline silicon films on amorphous silicon using B2H6, B(CH3)3 and BF3 dopant source gases. Journal of Applied Physics, 85 (8). 4141-4153 doi:10.1063/1.370323
 
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