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David, M. L., Alfieri, G., Monakhov, E. M., Hallén, A., Blanchard, C., Svensson, B. G., Barbot, J. F. (2004) Electrically active defects in irradiated 4H-SiC. Journal of Applied Physics, 95 (9). 4728-4733 doi:10.1063/1.1689731

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Reference TypeJournal (article/letter/editorial)
TitleElectrically active defects in irradiated 4H-SiC
JournalJournal of Applied Physics
AuthorsDavid, M. L.Author
Alfieri, G.Author
Monakhov, E. M.Author
Hallén, A.Author
Blanchard, C.Author
Svensson, B. G.Author
Barbot, J. F.Author
Year2004 (May)Volume95
Issue9
PublisherAIP Publishing
DOIdoi:10.1063/1.1689731Search in ResearchGate
Generate Citation Formats
Mindat Ref. ID5126947Long-form Identifiermindat:1:5:5126947:8
GUID0
Full ReferenceDavid, M. L., Alfieri, G., Monakhov, E. M., Hallén, A., Blanchard, C., Svensson, B. G., Barbot, J. F. (2004) Electrically active defects in irradiated 4H-SiC. Journal of Applied Physics, 95 (9). 4728-4733 doi:10.1063/1.1689731
Plain TextDavid, M. L., Alfieri, G., Monakhov, E. M., Hallén, A., Blanchard, C., Svensson, B. G., Barbot, J. F. (2004) Electrically active defects in irradiated 4H-SiC. Journal of Applied Physics, 95 (9). 4728-4733 doi:10.1063/1.1689731
In(2004, May) Journal of Applied Physics Vol. 95 (9) AIP Publishing

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Alfieri, G., Monakhov, E. V., Svensson, B. G., Hallén, A. (2005) Defect energy levels in hydrogen-implanted and electron-irradiated n-type 4H silicon carbide. Journal of Applied Physics, 98 (11). 113524pp. doi:10.1063/1.2139831
Alfieri, G., Monakhov, E. V., Svensson, B. G., Linnarsson, M. K. (2005) Annealing behavior between room temperature and 2000 °C of deep level defects in electron-irradiated n-type 4H silicon carbide. Journal of Applied Physics, 98 (4). 43518pp. doi:10.1063/1.2009816
Svensson, B. G., Monakhov, E.V., Alfieri, G., Mikelsen, M., Avset, B. S., Hallén, A. (2004) Defects and diffusion in high purity silicon for detector applications. physica status solidi (c), 1 (9). 2250-2257 doi:10.1002/pssc.200404847
Schmidt, D. C., Svensson, B. G., Lindström, J. L., Godey, S., Ntsoenzok, E., Barbot, J. F., Blanchard, C. (1999) 2 MeV electron irradiation of silicon at elevated temperatures: Influence on platinum diffusion and creation of electrically active defects. Journal of Applied Physics, 85 (7). 3556-3560 doi:10.1063/1.369773
Doyle, J. P., Linnarsson, M. K., Pellegrino, P., Keskitalo, N., Svensson, B. G., Schöner, A., Nordell, N., Lindström, J. L. (1998) Electrically active point defects in n-type 4H–SiC. Journal of Applied Physics, 84 (3). 1354-1357 doi:10.1063/1.368247
Zimmermann, C., Bonkerud, J., Herklotz, F., Sky, T. N., Hupfer, A., Monakhov, E., Svensson, B. G., Vines, L. (2018) Influence of annealing atmosphere on formation of electrically-active defects in rutile TiO2. Journal of Applied Physics, 123 (16). 161572pp. doi:10.1063/1.5011136
David, Marie-Laure, Alfieri, Giovanni, Monakhov, Edouard V., Hallén, Anders, Barbot, Jean François, Svensson, Bengt Gunnar (2003) Evidence for Two Charge States of the S-Center in Ion-Implanted 4H-SiC. Materials Science Forum, 433. 371-374 doi:10.4028/www.scientific.net/msf.433-436.371
Martin, D. M., Kortegaard Nielsen, H., Lévêque, P., Hallén, A., Alfieri, G., Svensson, B. G. (2004) Bistable defect in mega-electron-volt proton implanted 4H silicon carbide. Applied Physics Letters, 84 (10). 1704-1706 doi:10.1063/1.1651656
Schmidt, D. C., Svensson, B. G., Keskitalo, N., Godey, S., Ntsoenzok, E., Barbot, J. F., Blanchard, C. (1998) Proximity gettering of platinum in proton irradiated silicon. Journal of Applied Physics, 84 (8). 4214-4218 doi:10.1063/1.368695
Mikelsen, M, Monakhov, E V, Alfieri, G, Avset, B S, Härkönen, J, Svensson, B G (2005) Annealing of defects in irradiated silicon detector materials with high oxygen content. Journal of Physics: Condensed Matter, 17 (22). doi:10.1088/0953-8984/17/22/012
Tamulevicius, S., Svensson, B. G., Aboelfotoh, M. O., Hallén, A. (1992) Interaction between copper and point defects in proton‐irradiated silicon. Journal of Applied Physics, 71 (9). 4212-4216 doi:10.1063/1.350800
 
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