Yuen, Homan B., Bank, Seth R., Wistey, Mark A., Harris, James S., Moto, Akihiro (2004) Comparison of GaNAsSb and GaNAs as quantum-well barriers for GaInNAsSb optoelectronic devices operating at 1.3–1.55μm. Journal of Applied Physics, 96 (11). 6375-6381 doi:10.1063/1.1807028
Reference Type | Journal (article/letter/editorial) | ||
---|---|---|---|
Title | Comparison of GaNAsSb and GaNAs as quantum-well barriers for GaInNAsSb optoelectronic devices operating at 1.3–1.55μm | ||
Journal | Journal of Applied Physics | ||
Authors | Yuen, Homan B. | Author | |
Bank, Seth R. | Author | ||
Wistey, Mark A. | Author | ||
Harris, James S. | Author | ||
Moto, Akihiro | Author | ||
Year | 2004 (December) | Volume | 96 |
Issue | 11 | ||
Publisher | AIP Publishing | ||
DOI | doi:10.1063/1.1807028Search in ResearchGate | ||
Generate Citation Formats | |||
Mindat Ref. ID | 5127802 | Long-form Identifier | mindat:1:5:5127802:3 |
GUID | 0 | ||
Full Reference | Yuen, Homan B., Bank, Seth R., Wistey, Mark A., Harris, James S., Moto, Akihiro (2004) Comparison of GaNAsSb and GaNAs as quantum-well barriers for GaInNAsSb optoelectronic devices operating at 1.3–1.55μm. Journal of Applied Physics, 96 (11). 6375-6381 doi:10.1063/1.1807028 | ||
Plain Text | Yuen, Homan B., Bank, Seth R., Wistey, Mark A., Harris, James S., Moto, Akihiro (2004) Comparison of GaNAsSb and GaNAs as quantum-well barriers for GaInNAsSb optoelectronic devices operating at 1.3–1.55μm. Journal of Applied Physics, 96 (11). 6375-6381 doi:10.1063/1.1807028 | ||
In | (2004, December) Journal of Applied Physics Vol. 96 (11) AIP Publishing |
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