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Paskaleva, A., Ciechonski, R. R., Syväjärvi, M., Atanassova, E., Yakimova, R. (2005) Electrical behavior of 4H-SiC metal-oxide-semiconductor structures with Al2O3 as gate dielectric. Journal of Applied Physics, 97 (12). 124507pp. doi:10.1063/1.1938267

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Reference TypeJournal (article/letter/editorial)
TitleElectrical behavior of 4H-SiC metal-oxide-semiconductor structures with Al2O3 as gate dielectric
JournalJournal of Applied Physics
AuthorsPaskaleva, A.Author
Ciechonski, R. R.Author
Syväjärvi, M.Author
Atanassova, E.Author
Yakimova, R.Author
Year2005 (June 15)Volume97
Issue12
PublisherAIP Publishing
DOIdoi:10.1063/1.1938267Search in ResearchGate
Generate Citation Formats
Mindat Ref. ID5132352Long-form Identifiermindat:1:5:5132352:7
GUID0
Full ReferencePaskaleva, A., Ciechonski, R. R., Syväjärvi, M., Atanassova, E., Yakimova, R. (2005) Electrical behavior of 4H-SiC metal-oxide-semiconductor structures with Al2O3 as gate dielectric. Journal of Applied Physics, 97 (12). 124507pp. doi:10.1063/1.1938267
Plain TextPaskaleva, A., Ciechonski, R. R., Syväjärvi, M., Atanassova, E., Yakimova, R. (2005) Electrical behavior of 4H-SiC metal-oxide-semiconductor structures with Al2O3 as gate dielectric. Journal of Applied Physics, 97 (12). 124507pp. doi:10.1063/1.1938267
In(2005, June) Journal of Applied Physics Vol. 97 (12) AIP Publishing

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Paskaleva, A., Ciechonski, R.R, Syväjärvi, Mikael, Atanassova, E., Yakimova, Rositza (2005) Characterization of 4H-SiC MOS Structures with Al2O3 as Gate Dielectric. Materials Science Forum, 483. 709-712 doi:10.4028/www.scientific.net/msf.483-485.709
Porro, Samuele, Ciechonski, Rafal R., Syväjärvi, Mikael, Yakimova, Rositza (2005) Electrical analysis and interface states evaluation of Ni Schottky diodes on 4H-SiC thick epilayers. physica status solidi (a), 202 (13). 2508-2514 doi:10.1002/pssa.200521147
Yakimova, R., Vouroutzis, N., Syväjärvi, M., Stoemenos, J. (2005) Morphological features related to micropipe closing in 4H-SiC. Journal of Applied Physics, 98 (3). 34905pp. doi:10.1063/1.1988988
Syväjärvi, M., Yakimova, R., Jacobsson, H., Janzén, E. (2000) Structural improvement in sublimation epitaxy of 4H–SiC. Journal of Applied Physics, 88 (3). 1407-1411 doi:10.1063/1.373831
Ciechonski, R.R., Syväjärvi, M., ul-Hassan, J., Yakimova, R. (2005) Structural instabilities in growth of SiC crystals. Journal of Crystal Growth, 275 (1). doi:10.1016/j.jcrysgro.2004.11.020
Syväjärvi, M., Ciechonski, R.R., Yazdi, G.R., Yakimova, R. (2005) Fast epitaxy by PVT of SiC in hydrogen atmosphere. Journal of Crystal Growth, 275 (1). doi:10.1016/j.jcrysgro.2004.11.129
Chang, P. K., Hwu, J. G. (2018) Electrical characterization of 4H-SiC metal–oxide–semiconductor structure with Al2O3 stacking layers as dielectric. Applied Physics A, 124. doi:10.1007/s00339-017-1535-8
Kakanakova-Georgieva, A., Yakimova, R., Henry, A., Linnarsson, M. K., Syväjärvi, M., Janzén, E. (2002) Cathodoluminescence identification of donor–acceptor related emissions in as-grown 4H–SiC layers. Journal of Applied Physics, 91 (5). 2890-2895 doi:10.1063/1.1436293
Atanassova, E., Paskaleva, A., Novkovski, N., Georgieva, M. (2005) Conduction mechanisms and reliability of thermal Ta2O5–Si structures and the effect of the gate electrode. Journal of Applied Physics, 97 (9). 94104pp. doi:10.1063/1.1884758
Kakanakova-Georgieva, A., Yakimova, R., Syväjärvi, M., Janzén, E. (2001) Behavior of background impurities in thick 4H–SiC epitaxial layers. Applied Surface Science, 184. 242-246 doi:10.1016/s0169-4332(01)00495-0
Yazdi, G. R., Beckers, M., Giuliani, F., Syväjärvi, M., Hultman, L., Yakimova, R. (2009) Freestanding AlN single crystals enabled by self-organization of 2H-SiC pyramids on 4H-SiC substrates. Applied Physics Letters, 94 (8). 82109pp. doi:10.1063/1.3085958
 
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