Vote for your favorite mineral in #MinCup25! - Topaz vs. Kyanite
It's a battle of high-pressure colourful beauties of #topaz vs #kyanite. Which can stand the heat of round 1?
Log InRegister
Quick Links : The Mindat ManualThe Rock H. Currier Digital LibraryMindat Newsletter [Free Download]
Home PageAbout MindatThe Mindat ManualHistory of MindatCopyright StatusWho We AreContact UsAdvertise on Mindat
Donate to MindatCorporate SponsorshipSponsor a PageSponsored PagesMindat AdvertisersAdvertise on Mindat
Learning CenterWhat is a mineral?The most common minerals on earthInformation for EducatorsMindat ArticlesThe ElementsThe Rock H. Currier Digital LibraryGeologic Time
Minerals by PropertiesMinerals by ChemistryAdvanced Locality SearchRandom MineralRandom LocalitySearch by minIDLocalities Near MeSearch ArticlesSearch GlossaryMore Search Options
Search For:
Mineral Name:
Locality Name:
Keyword(s):
 
The Mindat ManualAdd a New PhotoRate PhotosLocality Edit ReportCoordinate Completion ReportAdd Glossary Item
Mining CompaniesStatisticsUsersMineral MuseumsClubs & OrganizationsMineral Shows & EventsThe Mindat DirectoryDevice SettingsThe Mineral Quiz
Photo SearchPhoto GalleriesSearch by ColorNew Photos TodayNew Photos YesterdayMembers' Photo GalleriesPast Photo of the Day GalleryPhotography

Anantathanasarn, S., Nötzel, R., van Veldhoven, P. J., Eijkemans, T. J., Wolter, J. H. (2005) Wavelength-tunable (1.55‐μm region) InAs quantum dots in InGaAsP∕InP (100) grown by metal-organic vapor-phase epitaxy. Journal of Applied Physics, 98 (1). 13503pp. doi:10.1063/1.1938271

Advanced
   -   Only viewable:
Reference TypeJournal (article/letter/editorial)
TitleWavelength-tunable (1.55‐μm region) InAs quantum dots in InGaAsP∕InP (100) grown by metal-organic vapor-phase epitaxy
JournalJournal of Applied Physics
AuthorsAnantathanasarn, S.Author
Nötzel, R.Author
van Veldhoven, P. J.Author
Eijkemans, T. J.Author
Wolter, J. H.Author
Year2005 (July)Volume98
Issue1
PublisherAIP Publishing
DOIdoi:10.1063/1.1938271Search in ResearchGate
Generate Citation Formats
Mindat Ref. ID5134265Long-form Identifiermindat:1:5:5134265:6
GUID0
Full ReferenceAnantathanasarn, S., Nötzel, R., van Veldhoven, P. J., Eijkemans, T. J., Wolter, J. H. (2005) Wavelength-tunable (1.55‐μm region) InAs quantum dots in InGaAsP∕InP (100) grown by metal-organic vapor-phase epitaxy. Journal of Applied Physics, 98 (1). 13503pp. doi:10.1063/1.1938271
Plain TextAnantathanasarn, S., Nötzel, R., van Veldhoven, P. J., Eijkemans, T. J., Wolter, J. H. (2005) Wavelength-tunable (1.55‐μm region) InAs quantum dots in InGaAsP∕InP (100) grown by metal-organic vapor-phase epitaxy. Journal of Applied Physics, 98 (1). 13503pp. doi:10.1063/1.1938271
In(2005, July) Journal of Applied Physics Vol. 98 (1) AIP Publishing

See Also

These are possibly similar items as determined by title/reference text matching only.

Zhou, D., Anantathanasarn, S., van Veldhoven, P. J., van Otten, F. W. M., Eijkemans, T. J., de Vries, T., Smalbrugge, E., Nötzel, R. (2006) Lateral wavelength control of InAs∕InGaAsP∕InP (100) quantum dots in the 1.55 μm region by selective-area metal organic vapor-phase epitaxy. Journal of Applied Physics, 100 (11). 113512pp. doi:10.1063/1.2398796
Anantathanasarn, S., Nötzel, R., van Veldhoven, P. J., van Otten, F. W. M., Eijkemans, T. J., Wolter, J. H. (2006) Stacking and polarization control of wavelength-tunable (1.55μm region) InAs∕InGaAsP∕InP (100) quantum dots. Applied Physics Letters, 88 (6). 63105pp. doi:10.1063/1.2172729
Anantathanasarn, S., Nötzel, R., van Veldhoven, P. J., van Otten, F. W. M., Barbarin, Y., Servanton, G., de Vries, T., Smalbrugge, E., Geluk, E. J., Eijkemans, T. J., Bente, E. A. J. M., Oei, Y. S., Smit, M. K., Wolter, J. H. (2006) Lasing of wavelength-tunable (1.55μm region) InAs∕InGaAsP∕InP (100) quantum dots grown by metal organic vapor-phase epitaxy. Applied Physics Letters, 89 (7). 73115pp. doi:10.1063/1.2336077
Gong, Q., Nötzel, R., van Veldhoven, P. J., Eijkemans, T. J., Wolter, J. H. (2004) Wavelength tuning of InAs quantum dots grown on InP (100) by chemical-beam epitaxy. Applied Physics Letters, 84 (2). 275-277 doi:10.1063/1.1640474
Gong, Q., Nötzel, R., van Veldhoven, P. J., Eijkemans, T. J., Wolter, J. H. (2004) InAs∕InP quantum dots emitting in the 1.55μm wavelength region by inserting submonolayer GaP interlayers. Applied Physics Letters, 85 (8). 1404-1406 doi:10.1063/1.1785859
van Veldhoven, P. J., Chauvin, N., Fiore, A., Nötzel, R. (2009) Low density 1.55 μm InAs/InGaAsP/InP (100) quantum dots enabled by an ultrathin GaAs interlayer. Applied Physics Letters, 95 (11). 113110pp. doi:10.1063/1.3230496
Anantathanasarn, S., Nötzel, R., van Veldhoven, P.J., van Otten, F.W.M., Eijkemans, T.J., Barbarin, Y., de Vries, T., Smalbrugge, E., Geluk, E.J., Bente, E.A.J.M., Oei, Y.S., Smit, M.K., Wolter, J.H. (2007) Stacking, polarization control, and lasing of wavelength tunable (1.55μm region) InAs/InGaAsP/InP (100) quantum dots. Journal of Crystal Growth, 298. 553-557 doi:10.1016/j.jcrysgro.2006.10.173
Zhou, D., Anantathanasarn, S., van Veldhoven, P. J., van Otten, F. W. M., Eijkemans, T. J., de Vries, T., Smalbrugge, E., Nötzel, R. (2007) Submicron active-passive integration with position and number controlled InAs∕InP (100) quantum dots (1.55μm wavelength region) by selective-area growth. Applied Physics Letters, 91 (13). 131102pp. doi:10.1063/1.2790378
Zhou, D., Nötzel, R., van Otten, F. W. M., van Veldhoven, P. J., Eijkemans, T. J. (2006) InAs∕InGaAsP sidewall quantum dots on shallow-patterned InP (311)A. Journal of Applied Physics, 100 (6). 63505pp. doi:10.1063/1.2345045
Kotani, Junji, van Veldhoven, Peter J., Nötzel, Richard (2009) Mid-infrared emission from InAs quantum dots, wells, and dots on well nanostructures grown on InP (100) by metal organic vapor phase epitaxy. Journal of Applied Physics, 106 (9). 93112pp. doi:10.1063/1.3257243
Wang, Hao, Yuan, Jiayue, Rieger, Torsten, van Veldhoven, Peter J., Nouwens, Peter, Eijkemans, Tom J., de Vries, Tjibbe, Smalbrugge, Barry, Geluk, Erik Jan, Nötzel, Richard (2009) Distribution control of 1.55μm InAs quantum dots down to small numbers on truncated InP pyramids grown by selective area metal organic vapor phase epitaxy. Applied Physics Letters, 94 (14). 143103pp. doi:10.1063/1.3116146
 
and/or  
Mindat.org is an outreach project of the Hudson Institute of Mineralogy, a 501(c)(3) not-for-profit organization.
Copyright © mindat.org and the Hudson Institute of Mineralogy 1993-2025, except where stated. Most political location boundaries are © OpenStreetMap contributors. Mindat.org relies on the contributions of thousands of members and supporters. Founded in 2000 by Jolyon Ralph.
To cite: Ralph, J., Von Bargen, D., Martynov, P., Zhang, J., Que, X., Prabhu, A., Morrison, S. M., Li, W., Chen, W., & Ma, X. (2025). Mindat.org: The open access mineralogy database to accelerate data-intensive geoscience research. American Mineralogist, 110(6), 833–844. doi:10.2138/am-2024-9486.
Privacy Policy - Terms & Conditions - Contact Us / DMCA issues - Report a bug/vulnerability Current server date and time: September 13, 2025 02:36:30
Go to top of page