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Buyanov, A.V., Holtz, P.O., Pozina, G., Monemar, B., Thordson, J., Andersson, T.G. (1997) Transport Properties of Silicon δ-Doped Gaas in High Electron Density Regime. Acta Physica Polonica A, 92 (4). 727-732 doi:10.12693/aphyspola.92.727

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Reference TypeJournal (article/letter/editorial)
TitleTransport Properties of Silicon δ-Doped Gaas in High Electron Density Regime
JournalActa Physica Polonica A
AuthorsBuyanov, A.V.Author
Holtz, P.O.Author
Pozina, G.Author
Monemar, B.Author
Thordson, J.Author
Andersson, T.G.Author
Year1997 (October)Volume92
Issue4
PublisherInstitute of Physics, Polish Academy of Sciences
DOIdoi:10.12693/aphyspola.92.727Search in ResearchGate
Generate Citation Formats
Mindat Ref. ID5141388Long-form Identifiermindat:1:5:5141388:4
GUID0
Full ReferenceBuyanov, A.V., Holtz, P.O., Pozina, G., Monemar, B., Thordson, J., Andersson, T.G. (1997) Transport Properties of Silicon δ-Doped Gaas in High Electron Density Regime. Acta Physica Polonica A, 92 (4). 727-732 doi:10.12693/aphyspola.92.727
Plain TextBuyanov, A.V., Holtz, P.O., Pozina, G., Monemar, B., Thordson, J., Andersson, T.G. (1997) Transport Properties of Silicon δ-Doped Gaas in High Electron Density Regime. Acta Physica Polonica A, 92 (4). 727-732 doi:10.12693/aphyspola.92.727
In(1997, October) Acta Physica Polonica A Vol. 92 (4) Institute of Physics, Polish Academy of Sciences

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Bugajski, M., Regiński, K., Godlewski, M., Wesołowski, M., Holtz, P.O., Buyanov, A.V., Monemar, B. (1996) Fermi-Edge Singularity in Excitonic Spectra of Modulation Doped AlGaAs/GaAs Quantum Wells. Acta Physica Polonica A, 90 (4). 751-754 doi:10.12693/aphyspola.90.751
Holtz, P. O., Sernelius, B., Buyanov, A. V., Pozina, G., Radamson, H. H., Madsen, L. D., McCaffrey, J. P., Monemar, B., Thordson, J., Andersson, T. G. (1998) Si δ-layers embedded in GaAs. Applied Physics Letters, 73 (25). 3709-3711 doi:10.1063/1.122871
Lundström, T., Bergman, J.P., Holtz, P.O., Monemar, B., Campman, K., Merz, J.L., Gossard, A.C. (1997) Theoretical and Experimental Study of the Radiative Decay Process in a Modulation Doped GaAs/AlGaAs Heterointerface. Acta Physica Polonica A, 92 (4). 824-828 doi:10.12693/aphyspola.92.824
Godlewski, M., Wojtowicz, T., Karczewski, G., Kossut, J., Bergman, J.P., Holtz, P.O., Monemar, B. (1997) Hot Photoluminescence in CdTe/CdMnTe Quantum Well Structures Grown by Molecular Beam Epitaxy. Acta Physica Polonica A, 92 (4). 765-768 doi:10.12693/aphyspola.92.765
Godlewski, M., Bergman, J.P., Holtz, P.O., Monemar, B., Bugajski, M., Regiński, K., Kaniewska, M. (1995) Influence of Growth Conditions on Exciton Properties in Thin Quantum Wells of GaAs/AlGaAs. Acta Physica Polonica A, 88 (4). 719-722 doi:10.12693/aphyspola.88.719
Godlewski, M., Surma, M., Wilamowski, Z., Wojtowicz, T., Karczewski, G., Kossut, J., Holtz, P.O., Bergman, J.P., Monemar, B. (1997) Exciton Transfer in Multiple Quantum Well Structures of CdTe/CdMnTe Grown by Molecular Beam Epitaxy. Acta Physica Polonica A, 92 (4). 761-764 doi:10.12693/aphyspola.92.761
Bugajski, M., Godlewski, M., Regiński, K., Holtz, P.O., Bergman, J.P., Monemar, B. (1998) Fermi-Edge Singularity in Luminescence Spectra of P-Type Modulation Doped AlGaAs/GaAs Quantum Wells. Acta Physica Polonica A, 94 (2). 265-270 doi:10.12693/aphyspola.94.265
Karlsson, K.F., Moskalenko, E.S., Holtz, P.O., Monemar, B., Schoenfeld, W.V., Garcia, J.M., Petroff, P.M. (2001) Carrier Diffusion in the Barrier Enabling Formation of Charged Excitons in InAs/GaAs Quantum Dots. Acta Physica Polonica A, 100 (3). 387-395 doi:10.12693/aphyspola.100.387
Buyanov, A. V., Holtz, P. O., Chen, W. M., Monemar, B., Anderson, T. G., Thordson, J. (1996) The ordered–disordered transition in Si delta‐doped GaAs. Applied Physics Letters, 68 (24). 3464-3466 doi:10.1063/1.115794
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Adamowski, J., Spisak, B. (1997) Two-Electron Quantum Dots in Magnetic Field. Acta Physica Polonica A, 92 (4). 695-698 doi:10.12693/aphyspola.92.695
 
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