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Nguyen, Thang, Varhue, Walter, Cross, Michael, Pino, Robinson, Adams, Edward, Lavoie, Mark, Lee, Jaichan (2007) Structural evolution and characterization of heteroepitaxial GaSb thin films on Si(111) substrates. Journal of Applied Physics, 101 (7). 73707pp. doi:10.1063/1.2715838

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Reference TypeJournal (article/letter/editorial)
TitleStructural evolution and characterization of heteroepitaxial GaSb thin films on Si(111) substrates
JournalJournal of Applied Physics
AuthorsNguyen, ThangAuthor
Varhue, WalterAuthor
Cross, MichaelAuthor
Pino, RobinsonAuthor
Adams, EdwardAuthor
Lavoie, MarkAuthor
Lee, JaichanAuthor
Year2007 (April)Volume101
Issue7
PublisherAIP Publishing
DOIdoi:10.1063/1.2715838Search in ResearchGate
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Mindat Ref. ID5148032Long-form Identifiermindat:1:5:5148032:7
GUID0
Full ReferenceNguyen, Thang, Varhue, Walter, Cross, Michael, Pino, Robinson, Adams, Edward, Lavoie, Mark, Lee, Jaichan (2007) Structural evolution and characterization of heteroepitaxial GaSb thin films on Si(111) substrates. Journal of Applied Physics, 101 (7). 73707pp. doi:10.1063/1.2715838
Plain TextNguyen, Thang, Varhue, Walter, Cross, Michael, Pino, Robinson, Adams, Edward, Lavoie, Mark, Lee, Jaichan (2007) Structural evolution and characterization of heteroepitaxial GaSb thin films on Si(111) substrates. Journal of Applied Physics, 101 (7). 73707pp. doi:10.1063/1.2715838
In(2007, April) Journal of Applied Physics Vol. 101 (7) AIP Publishing

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