Vote for your favorite mineral in #MinCup25! - Stibnite vs. Okenite
It's a battle of dark and light as soft, dramatic stibnite goes up against adorable cottonballs of Okenite.
Log InRegister
Quick Links : The Mindat ManualThe Rock H. Currier Digital LibraryMindat Newsletter [Free Download]
Home PageAbout MindatThe Mindat ManualHistory of MindatCopyright StatusWho We AreContact UsAdvertise on Mindat
Donate to MindatCorporate SponsorshipSponsor a PageSponsored PagesMindat AdvertisersAdvertise on Mindat
Learning CenterWhat is a mineral?The most common minerals on earthInformation for EducatorsMindat ArticlesThe ElementsThe Rock H. Currier Digital LibraryGeologic Time
Minerals by PropertiesMinerals by ChemistryAdvanced Locality SearchRandom MineralRandom LocalitySearch by minIDLocalities Near MeSearch ArticlesSearch GlossaryMore Search Options
Search For:
Mineral Name:
Locality Name:
Keyword(s):
 
The Mindat ManualAdd a New PhotoRate PhotosLocality Edit ReportCoordinate Completion ReportAdd Glossary Item
Mining CompaniesStatisticsUsersMineral MuseumsClubs & OrganizationsMineral Shows & EventsThe Mindat DirectoryDevice SettingsThe Mineral Quiz
Photo SearchPhoto GalleriesSearch by ColorNew Photos TodayNew Photos YesterdayMembers' Photo GalleriesPast Photo of the Day GalleryPhotography

Schroeder, T., Lupina, G., Sohal, R., Lippert, G., Wenger, Ch., Seifarth, O., Tallarida, M., Schmeisser, D. (2007) Synchrotron radiation x-ray photoelectron spectroscopy study on the interface chemistry of high-k PrxAl2−xO3 (x=0–2) dielectrics on TiN for dynamic random access memory applications. Journal of Applied Physics, 102 (1). 14103pp. doi:10.1063/1.2749468

Advanced
   -   Only viewable:
Reference TypeJournal (article/letter/editorial)
TitleSynchrotron radiation x-ray photoelectron spectroscopy study on the interface chemistry of high-k PrxAl2−xO3 (x=0–2) dielectrics on TiN for dynamic random access memory applications
JournalJournal of Applied Physics
AuthorsSchroeder, T.Author
Lupina, G.Author
Sohal, R.Author
Lippert, G.Author
Wenger, Ch.Author
Seifarth, O.Author
Tallarida, M.Author
Schmeisser, D.Author
Year2007 (July)Volume102
Issue1
PublisherAIP Publishing
DOIdoi:10.1063/1.2749468Search in ResearchGate
Generate Citation Formats
Mindat Ref. ID5149443Long-form Identifiermindat:1:5:5149443:6
GUID0
Full ReferenceSchroeder, T., Lupina, G., Sohal, R., Lippert, G., Wenger, Ch., Seifarth, O., Tallarida, M., Schmeisser, D. (2007) Synchrotron radiation x-ray photoelectron spectroscopy study on the interface chemistry of high-k PrxAl2−xO3 (x=0–2) dielectrics on TiN for dynamic random access memory applications. Journal of Applied Physics, 102 (1). 14103pp. doi:10.1063/1.2749468
Plain TextSchroeder, T., Lupina, G., Sohal, R., Lippert, G., Wenger, Ch., Seifarth, O., Tallarida, M., Schmeisser, D. (2007) Synchrotron radiation x-ray photoelectron spectroscopy study on the interface chemistry of high-k PrxAl2−xO3 (x=0–2) dielectrics on TiN for dynamic random access memory applications. Journal of Applied Physics, 102 (1). 14103pp. doi:10.1063/1.2749468
In(2007, July) Journal of Applied Physics Vol. 102 (1) AIP Publishing

See Also

These are possibly similar items as determined by title/reference text matching only.

Lupina, G., Schroeder, T., Dabrowski, J., Wenger, Ch., Mane, A., Lippert, G., Müssig, H.-J., Hoffmann, P., Schmeisser, D. (2005) Praseodymium silicate layers with atomically abrupt interface on Si(100). Applied Physics Letters, 87 (9). 92901pp. doi:10.1063/1.2032596
Lupina, G., Kozłowski, G., Dabrowski, J., Wenger, Ch., Dudek, P., Zaumseil, P., Lippert, G., Walczyk, Ch., Müssig, H.-J. (2008) Thin BaHfO3 high-k dielectric layers on TiN for memory capacitor applications. Applied Physics Letters, 92 (6). 62906pp. doi:10.1063/1.2842426
Schroeder, T., Lupina, G., Dabrowski, J., Mane, A., Wenger, Ch., Lippert, G., Müssig, H.-J. (2005) Titanium-added praseodymium silicate high-k layers on Si(001). Applied Physics Letters, 87 (2). 22902pp. doi:10.1063/1.1978978
Lupina, G., Schroeder, T., Dabrowski, J., Wenger, Ch., Mane, A. U., Müssig, H.-J., Hoffmann, P., Schmeisser, D. (2006) Praseodymium silicate films on Si(100) for gate dielectric applications: Physical and electrical characterization. Journal of Applied Physics, 99 (11). 114109pp. doi:10.1063/1.2202235
Wenger, Ch., Lupina, G., Lukosius, M., Seifarth, O., Müssig, H.-J., Pasko, S., Lohe, Ch. (2008) Microscopic model for the nonlinear behavior of high-k metal-insulator-metal capacitors. Journal of Applied Physics, 103 (10). 104103pp. doi:10.1063/1.2919573
Schroeder, T., Costina, I., Giussani, A., Weidner, G., Seifarth, O., Wenger, Ch., Zaumseil, P., Mocuta, C., Metzger, T. H., Geiger, D., Lichte, H. (2007) Self-assembled Ge nanocrystals on high-k cubic Pr2O3(111)∕Si(111) support systems. Journal of Applied Physics, 102 (3). 34107pp. doi:10.1063/1.2767374
Lupina, G., Schroeder, T., Wenger, Ch., Dabrowski, J., Müssig, H.-J. (2006) Thermal stability of Pr silicate high-k layers on Si(001). Applied Physics Letters, 89 (22). 222909pp. doi:10.1063/1.2399350
Seifarth, O., Schubert, M. A., Giussani, A., Klenov, D. O., Schmeißer, D., Schroeder, T. (2010) Single crystalline Pr2−xYxO3 (x=0–2) dielectrics on Si with tailored electronic and crystallographic structure. Journal of Applied Physics, 108 (10). 103709pp. doi:10.1063/1.3511751
Seifarth, O., Walczyk, Ch., Lupina, G., Dabrowski, J., Zaumseil, P., Weidner, G., Müssig, H.-J., Schroeder, T. (2009) Dielectric properties of single crystalline PrO2(111)/Si(111) heterostructures: Amorphous interface and electrical instabilities. Journal of Applied Physics, 106 (10). 104105pp. doi:10.1063/1.3259411
Mane, A. U., Wenger, Ch., Schroeder, T., Zaumseil, P., Lippert, G., Weidner, G., Müssig, H.-J. (2005) A CMOS Process-Compatible Wet-Etching Recipe for the High-k Gate Dielectrics Pr[sub 2]O[sub 3] and Pr[sub 2−x]Ti[sub x]O[sub 3]. Journal of the Electrochemical Society, 152. doi:10.1149/1.1914751
Walczyk, Ch., Wenger, Ch., Sohal, R., Lukosius, M., Fox, A., Dąbrowski, J., Wolansky, D., Tillack, B., Müssig, H.-J., Schroeder, T. (2009) Pulse-induced low-power resistive switching in HfO2 metal-insulator-metal diodes for nonvolatile memory applications. Journal of Applied Physics, 105 (11). 114103pp. doi:10.1063/1.3139282
 
and/or  
Mindat.org is an outreach project of the Hudson Institute of Mineralogy, a 501(c)(3) not-for-profit organization.
Copyright © mindat.org and the Hudson Institute of Mineralogy 1993-2025, except where stated. Most political location boundaries are © OpenStreetMap contributors. Mindat.org relies on the contributions of thousands of members and supporters. Founded in 2000 by Jolyon Ralph.
To cite: Ralph, J., Von Bargen, D., Martynov, P., Zhang, J., Que, X., Prabhu, A., Morrison, S. M., Li, W., Chen, W., & Ma, X. (2025). Mindat.org: The open access mineralogy database to accelerate data-intensive geoscience research. American Mineralogist, 110(6), 833–844. doi:10.2138/am-2024-9486.
Privacy Policy - Terms & Conditions - Contact Us / DMCA issues - Report a bug/vulnerability Current server date and time: September 2, 2025 02:22:07
Go to top of page