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van der Laak, N. K., Oliver, R. A., Kappers, M. J., Humphreys, C. J. (2007) Characterization of InGaN quantum wells with gross fluctuations in width. Journal of Applied Physics, 102 (1). 13513pp. doi:10.1063/1.2751401

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Reference TypeJournal (article/letter/editorial)
TitleCharacterization of InGaN quantum wells with gross fluctuations in width
JournalJournal of Applied Physics
Authorsvan der Laak, N. K.Author
Oliver, R. A.Author
Kappers, M. J.Author
Humphreys, C. J.Author
Year2007 (July)Volume102
Issue1
PublisherAIP Publishing
DOIdoi:10.1063/1.2751401Search in ResearchGate
Generate Citation Formats
Mindat Ref. ID5149508Long-form Identifiermindat:1:5:5149508:2
GUID0
Full Referencevan der Laak, N. K., Oliver, R. A., Kappers, M. J., Humphreys, C. J. (2007) Characterization of InGaN quantum wells with gross fluctuations in width. Journal of Applied Physics, 102 (1). 13513pp. doi:10.1063/1.2751401
Plain Textvan der Laak, N. K., Oliver, R. A., Kappers, M. J., Humphreys, C. J. (2007) Characterization of InGaN quantum wells with gross fluctuations in width. Journal of Applied Physics, 102 (1). 13513pp. doi:10.1063/1.2751401
In(2007, July) Journal of Applied Physics Vol. 102 (1) AIP Publishing

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van der Laak, Nicole K., Oliver, Rachel A., Kappers, Menno J., Humphreys, Colin J. (2007) Role of gross well-width fluctuations in bright, green-emitting single InGaN∕GaN quantum well structures. Applied Physics Letters, 90 (12). 121911pp. doi:10.1063/1.2715166
Oliver, R. A., Kappers, M. J., Humphreys, C. J. (2008) Gross well-width fluctuations in InGaN quantum wells. physica status solidi (c), 5 (6). 1475-1481 doi:10.1002/pssc.200778557
Oliver, R. A., Kappers, M. J., van der Laak, N. K., Humphreys, C. J. (2006) Three methods for the growth of InGaN nanostructures by MOVPE. physica status solidi (c), 3 (6). 1552-1556 doi:10.1002/pssc.200565163
Badcock, T. J., Hao, R., Moram, M. A., Kappers, M. J., Dawson, P., Oliver, R. A., Humphreys, C. J. (2012) Recombination mechanisms in heteroepitaxial non-polar InGaN/GaN quantum wells. Journal of Applied Physics, 112 (1). 13534pp. doi:10.1063/1.4731730
Dawson, P., Schulz, S., Oliver, R. A., Kappers, M. J., Humphreys, C. J. (2016) The nature of carrier localisation in polar and nonpolar InGaN/GaN quantum wells. Journal of Applied Physics, 119 (18). 181505pp. doi:10.1063/1.4948237
Davies, M. J., Dawson, P., Hammersley, S., Zhu, T., Kappers, M. J., Humphreys, C. J., Oliver, R. A. (2016) Comparative studies of efficiency droop in polar and non-polar InGaN quantum wells. Applied Physics Letters, 108 (25). 252101pp. doi:10.1063/1.4954236
Badcock, T. J., Dawson, P., Davies, M. J., Kappers, M. J., Massabuau, F. C.-P., Oehler, F., Oliver, R. A., Humphreys, C. J. (2014) Low temperature carrier redistribution dynamics in InGaN/GaN quantum wells. Journal of Applied Physics, 115 (11). 113505pp. doi:10.1063/1.4868628
Martinez, C. E., Stanton, N. M., Kent, A. J., Graham, D. M., Dawson, P., Kappers, M. J., Humphreys, C. J. (2005) Determination of relative internal quantum efficiency in InGaN∕GaN quantum wells. Journal of Applied Physics, 98 (5). 53509pp. doi:10.1063/1.2033144
Davies, M. J., Badcock, T. J., Dawson, P., Kappers, M. J., Oliver, R. A., Humphreys, C. J. (2013) High excitation carrier density recombination dynamics of InGaN/GaN quantum well structures: Possible relevance to efficiency droop. Applied Physics Letters, 102 (2). 22106pp. doi:10.1063/1.4781398
van der Laak, N. K., Oliver, R. A., Barnard, J. S., Cherns, P. D., Kappers, M. J., Humphreys, C. J. (2006) Towards a better understanding of nano-islands formed during atmospheric pressure MOVPE. physica status solidi (c), 3 (6). 1544-1547 doi:10.1002/pssc.200565164
Oliver, R A, Bennett, S E, Zhu, T, Beesley, D J, Kappers, M J, Saxey, D W, Cerezo, A, Humphreys, C J (2010) Microstructural origins of localization in InGaN quantum wells. Journal of Physics D: Applied Physics, 43. 354003pp. doi:10.1088/0022-3727/43/35/354003
 
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