Toh, Eng-Huat, Wang, Grace Huiqi, Samudra, Ganesh, Yeo, Yee-Chia (2008) Device physics and design of germanium tunneling field-effect transistor with source and drain engineering for low power and high performance applications. Journal of Applied Physics, 103 (10). 104504pp. doi:10.1063/1.2924413
| Reference Type | Journal (article/letter/editorial) | ||
|---|---|---|---|
| Title | Device physics and design of germanium tunneling field-effect transistor with source and drain engineering for low power and high performance applications | ||
| Journal | Journal of Applied Physics | ||
| Authors | Toh, Eng-Huat | Author | |
| Wang, Grace Huiqi | Author | ||
| Samudra, Ganesh | Author | ||
| Yeo, Yee-Chia | Author | ||
| Year | 2008 (May 15) | Volume | 103 |
| Issue | 10 | ||
| Publisher | AIP Publishing | ||
| DOI | doi:10.1063/1.2924413Search in ResearchGate | ||
| Generate Citation Formats | |||
| Mindat Ref. ID | 5152883 | Long-form Identifier | mindat:1:5:5152883:0 |
| GUID | 0 | ||
| Full Reference | Toh, Eng-Huat, Wang, Grace Huiqi, Samudra, Ganesh, Yeo, Yee-Chia (2008) Device physics and design of germanium tunneling field-effect transistor with source and drain engineering for low power and high performance applications. Journal of Applied Physics, 103 (10). 104504pp. doi:10.1063/1.2924413 | ||
| Plain Text | Toh, Eng-Huat, Wang, Grace Huiqi, Samudra, Ganesh, Yeo, Yee-Chia (2008) Device physics and design of germanium tunneling field-effect transistor with source and drain engineering for low power and high performance applications. Journal of Applied Physics, 103 (10). 104504pp. doi:10.1063/1.2924413 | ||
| In | (2008, May) Journal of Applied Physics Vol. 103 (10) AIP Publishing | ||
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