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Lorenz, K., Roqan, I. S., Franco, N., O’Donnell, K. P., Darakchieva, V., Alves, E., Trager-Cowan, C., Martin, R. W., As, D. J., Panfilova, M. (2009) Europium doping of zincblende GaN by ion implantation. Journal of Applied Physics, 105 (11). 113507pp. doi:10.1063/1.3138806

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Reference TypeJournal (article/letter/editorial)
TitleEuropium doping of zincblende GaN by ion implantation
JournalJournal of Applied Physics
AuthorsLorenz, K.Author
Roqan, I. S.Author
Franco, N.Author
O’Donnell, K. P.Author
Darakchieva, V.Author
Alves, E.Author
Trager-Cowan, C.Author
Martin, R. W.Author
As, D. J.Author
Panfilova, M.Author
Year2009 (June)Volume105
Issue11
PublisherAIP Publishing
DOIdoi:10.1063/1.3138806Search in ResearchGate
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Mindat Ref. ID5162134Long-form Identifiermindat:1:5:5162134:0
GUID0
Full ReferenceLorenz, K., Roqan, I. S., Franco, N., O’Donnell, K. P., Darakchieva, V., Alves, E., Trager-Cowan, C., Martin, R. W., As, D. J., Panfilova, M. (2009) Europium doping of zincblende GaN by ion implantation. Journal of Applied Physics, 105 (11). 113507pp. doi:10.1063/1.3138806
Plain TextLorenz, K., Roqan, I. S., Franco, N., O’Donnell, K. P., Darakchieva, V., Alves, E., Trager-Cowan, C., Martin, R. W., As, D. J., Panfilova, M. (2009) Europium doping of zincblende GaN by ion implantation. Journal of Applied Physics, 105 (11). 113507pp. doi:10.1063/1.3138806
In(2009, June) Journal of Applied Physics Vol. 105 (11) AIP Publishing

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Roqan, I. S., O'Donnell, K. P., Trager-Cowan, C., Hourahine, B., Martin, R. W., Lorenz, K., Alves, E., As, D. J., Panfilova, M., Watson, I. M. (2008) Luminescence spectroscopy of Eu-implanted zincblende GaN. physica status solidi (b), 245 (1). 170-173 doi:10.1002/pssb.200743372
Roqan, I. S., O’Donnell, K. P., Martin, R. W., Trager-Cowan, C., Matias, V., Vantomme, A., Lorenz, K., Alves, E., Watson, I. M. (2009) Optical and structural properties of Eu-implanted InxAl1−xN. Journal of Applied Physics, 106 (8). 83508pp. doi:10.1063/1.3245386
Lorenz, K., Alves, E., Roqan, I. S., Martin, R. W., Trager-Cowan, C., O'Donnell, K. P., Watson, I. M. (2008) Rare earth doping of III-nitride alloys by ion implantation. physica status solidi (a), 205 (1). 34-37 doi:10.1002/pssa.200776714
Miranda, S. M. C., Edwards, P. R., O'Donnell, K. P., Boćkowski, M., Alves, E., Roqan, I. S., Vantomme, A., Lorenz, K. (2014) Sequential multiple-step europium ion implantation and annealing of GaN. physica status solidi (c), 11 (2). 253-257 doi:10.1002/pssc.201300210
Pereira, S., Correia, M. R., Pereira, E., Trager-Cowan, C., Sweeney, F., O’Donnell, K. P., Alves, E., Franco, N., Sequeira, A. D. (2002) Structural and optical properties of InGaN/GaN layers close to the critical layer thickness. Applied Physics Letters, 81 (7). 1207-1209 doi:10.1063/1.1499220
Lorenz, K, Barradas, N P, Alves, E, Roqan, I S, Nogales, E, Martin, R W, O'Donnell, K P, Gloux, F, Ruterana, P (2009) Structural and optical characterization of Eu-implanted GaN. Journal of Physics D: Applied Physics, 42. 165103pp. doi:10.1088/0022-3727/42/16/165103
Wang, K., Martin, R. W., O’Donnell, K. P., Katchkanov, V., Nogales, E., Lorenz, K., Alves, E., Ruffenach, S., Briot, O. (2005) Selectively excited photoluminescence from Eu-implanted GaN. Applied Physics Letters, 87 (11). 112107pp. doi:10.1063/1.2045551
Lorenz, K., Magalhães, S., Franco, N., Barradas, N. P., Darakchieva, V., Alves, E., Pereira, S., Correia, M. R., Munnik, F., Martin, R. W., O'Donnell, K. P., Watson, I. M. (2010) Al1−xInxN/GaN bilayers: Structure, morphology, and optical properties. physica status solidi (b), 247 (7). 1740-1746 doi:10.1002/pssb.200983656
Wang, K., Martin, R. W., Amabile, D., Edwards, P. R., Hernandez, S., Nogales, E., O’Donnell, K. P., Lorenz, K., Alves, E., Matias, V., Vantomme, A., Wolverson, D., Watson, I. M. (2008) Optical energies of AlInN epilayers. Journal of Applied Physics, 103 (7). 73510pp. doi:10.1063/1.2898533
Lorenz, K., Franco, N., Alves, E., Watson, I. M., Martin, R. W., O’Donnell, K. P. (2006) Anomalous Ion Channeling inAlInN/GaNBilayers: Determination of the Strain State. Physical Review Letters, 97 (8). doi:10.1103/physrevlett.97.085501
Magalhães, S, Franco, N, Watson, I M, Martin, R W, O’Donnell, K P, Schenk, H P D, Tang, F, Sadler, T C, Kappers, M J, Oliver, R A, Monteiro, T, Martin, T L, Bagot, P A J, Moody, M P, Alves, E, Lorenz, K (2017) Validity of Vegard’s rule for Al1−xInxN (0.08  <  x  <  0.28) thin films grown on GaN templates. Journal of Physics D: Applied Physics, 50. 205107pp. doi:10.1088/1361-6463/aa69dc
 
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