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Borysiuk, J., Sołtys, J., Piechota, J. (2011) Stacking sequence dependence of graphene layers on SiC (0001−)—Experimental and theoretical investigation. Journal of Applied Physics, 109 (9). 93523pp. doi:10.1063/1.3585829

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Reference TypeJournal (article/letter/editorial)
TitleStacking sequence dependence of graphene layers on SiC (0001−)—Experimental and theoretical investigation
JournalJournal of Applied Physics
AuthorsBorysiuk, J.Author
Sołtys, J.Author
Piechota, J.Author
Year2011 (May)Volume109
Issue9
PublisherAIP Publishing
DOIdoi:10.1063/1.3585829Search in ResearchGate
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Mindat Ref. ID5183268Long-form Identifiermindat:1:5:5183268:1
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Full ReferenceBorysiuk, J., Sołtys, J., Piechota, J. (2011) Stacking sequence dependence of graphene layers on SiC (0001−)—Experimental and theoretical investigation. Journal of Applied Physics, 109 (9). 93523pp. doi:10.1063/1.3585829
Plain TextBorysiuk, J., Sołtys, J., Piechota, J. (2011) Stacking sequence dependence of graphene layers on SiC (0001−)—Experimental and theoretical investigation. Journal of Applied Physics, 109 (9). 93523pp. doi:10.1063/1.3585829
In(2011, May) Journal of Applied Physics Vol. 109 (9) AIP Publishing

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Borysiuk, J., Sołtys, J., Piechota, J., Krukowski, S., Baranowski, J. M., Stępniewski, R. (2014) Structural defects in epitaxial graphene layers synthesized on C-terminated 4H-SiC (0001¯) surface—Transmission electron microscopy and density functional theory studies. Journal of Applied Physics, 115 (5). 54310pp. doi:10.1063/1.4863644
Borysiuk, J., Sołtys, J., Bożek, R., Piechota, J., Krukowski, S., Strupiński, W., Baranowski, J. M., Stępniewski, R. (2012) Role of structure of C-terminated4H-SiC(0001¯) surface in growth of graphene layers: Transmission electron microscopy and density functional theory studies. Physical Review B, 85 (4) doi:10.1103/physrevb.85.045426
Sołtys, Jakub, Piechota, Jacek, Ptasinska, Maria, Krukowski, Stanisław (2014) Hydrogen intercalation of single and multiple layer graphene synthesized on Si-terminated SiC(0001) surface. Journal of Applied Physics, 116 (8). 83502pp. doi:10.1063/1.4893750
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Tokarczyk, M., Kowalski, G., Możdżonek, M., Borysiuk, J., Stępniewski, R., Strupiński, W., Ciepielewski, P., Baranowski, J. M. (2013) Structural investigations of hydrogenated epitaxial graphene grown on 4H-SiC (0001). Applied Physics Letters, 103 (24). 241915pp. doi:10.1063/1.4848815
Strudwick, A. J., Creeth, G. L., Johansson, N. A. B., Marrows, C. H. (2011) Probing residual strain in epitaxial graphene layers on 4H-SiC(0001¯) with Raman spectroscopy. Applied Physics Letters, 98 (5). 51910pp. doi:10.1063/1.3551625
Krukowski, Stanisław, Sołtys, Jakub, Borysiuk, Jolanta, Piechota, Jacek (2014) Influence of a parallel electric field on the dispersion relation of graphene – A new route to Dirac logics. Journal of Crystal Growth, 401. 869-873 doi:10.1016/j.jcrysgro.2014.01.037
Borysiuk, J., Bożek, R., Grodecki, K., Wysmołek, A., Strupiński, W., Stępniewski, R., Baranowski, J. M. (2010) Transmission electron microscopy investigations of epitaxial graphene on C-terminated 4H–SiC. Journal of Applied Physics, 108 (1). 13518pp. doi:10.1063/1.3445776
Lazarov, V. K., Hasnip, P. J., Cai, Z., Yoshida, K., Ziemer, K. S. (2011) Growth and interface phase stability of barium hexaferrite films on SiC(0001). Journal of Applied Physics, 109 (7). doi:10.1063/1.3559496
Oida, S., Hannon, J. B., Tromp, R. M. (2014) Controlled synthesis and decoupling of monolayer graphene on SiC(0001). Applied Physics Letters, 104 (16). 161605pp. doi:10.1063/1.4873116
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