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Sako, Ryūtaro, Hasegawa, Naomi, Tsuchiya, Hideaki, Ogawa, Matsuto (2013) Computational study on band structure engineering using graphene nanomeshes. Journal of Applied Physics, 113 (14). 143702pp. doi:10.1063/1.4800624

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Reference TypeJournal (article/letter/editorial)
TitleComputational study on band structure engineering using graphene nanomeshes
JournalJournal of Applied Physics
AuthorsSako, RyūtaroAuthor
Hasegawa, NaomiAuthor
Tsuchiya, HideakiAuthor
Ogawa, MatsutoAuthor
Year2013 (April 14)Volume113
Issue14
PublisherAIP Publishing
DOIdoi:10.1063/1.4800624Search in ResearchGate
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Mindat Ref. ID5192054Long-form Identifiermindat:1:5:5192054:2
GUID0
Full ReferenceSako, Ryūtaro, Hasegawa, Naomi, Tsuchiya, Hideaki, Ogawa, Matsuto (2013) Computational study on band structure engineering using graphene nanomeshes. Journal of Applied Physics, 113 (14). 143702pp. doi:10.1063/1.4800624
Plain TextSako, Ryūtaro, Hasegawa, Naomi, Tsuchiya, Hideaki, Ogawa, Matsuto (2013) Computational study on band structure engineering using graphene nanomeshes. Journal of Applied Physics, 113 (14). 143702pp. doi:10.1063/1.4800624
In(2013, April) Journal of Applied Physics Vol. 113 (14) AIP Publishing

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Tsuchiya, Hideaki, Hosokawa, Hiroshi, Sako, Ryūtaro, Hasegawa, Naomi, Ogawa, Matsuto (2012) Theoretical Evaluation of Ballistic Electron Transport in Field-Effect Transistors with Semiconducting Graphene Channels. Japanese Journal of Applied Physics, 51. 55103 doi:10.1143/jjap.51.055103
Tsuchiya, Hideaki, Hosokawa, Hiroshi, Sako, Ryūtaro, Hasegawa, Naomi, Ogawa, Matsuto (2012) Theoretical Evaluation of Ballistic Electron Transport in Field-Effect Transistors with Semiconducting Graphene Channels. Japanese Journal of Applied Physics, 51 (5) 55103 doi:10.7567/jjap.51.055103
Hirai, Hideki, Tsuchiya, Hideaki, Kamakura, Yoshinari, Mori, Nobuya, Ogawa, Matsuto (2014) Electron mobility calculation for graphene on substrates. Journal of Applied Physics, 116 (8). 83703pp. doi:10.1063/1.4893650
Hosokawa, Hiroshi, Sako, Ryūtaro, Ando, Haruki, Tsuchiya, Hideaki (2010) Performance Comparisons of Bilayer Graphene and Graphene Nanoribbon Field-Effect Transistors under Ballistic Transport. Japanese Journal of Applied Physics, 49 (11) 110207 doi:10.1143/jjap.49.110207
Tsuchiya, Hideaki, Ogawa, Matsuto, Miyoshi, Tanroku (1992) Static and Dynamic Electron Transport in Resonant-Tunneling Diodes. Japanese Journal of Applied Physics, 31. 745-750 doi:10.1143/jjap.31.745
Tsuchiya, Hideaki, Ogawa, Matsuto, Miyoshi, Tanroku (1991) Wigner Function Formulation of Quantum Transport in Electron Waveguides and Its Application. Japanese Journal of Applied Physics, 30. 3853-3858 doi:10.1143/jjap.30.3853
Tsuchiya, Hideaki, Horino, Motoki, Ogawa, Matsuto, Miyoshi, Tanroku (2003) Quantum Transport Simulation of Ultrathin and Ultrashort Silicon-On-Insulator Metal–Oxide–Semiconductor Field-Effect Transistors. Japanese Journal of Applied Physics, 42. 7238-7243 doi:10.1143/jjap.42.7238
Tsuchiya, Hideaki, Oda, Azusa, Ogawa, Matsuto, Miyoshi, Tanroku (2005) Quantum-Corrected Monte Carlo and Molecular Dynamics Simulation on Electron-Density-Dependent Velocity Saturation in Silicon Metal–Oxide–Semiconductor Field-Effect Transistors. Japanese Journal of Applied Physics, 44 (11) 7820-7826 doi:10.1143/jjap.44.7820
Koba, Shunsuke, Ishida, Ryoma, Kubota, Yuko, Tsuchiya, Hideaki, Kamakura, Yoshinari, Mori, Nobuya, Ogawa, Matsuto (2014) Effects of increased acoustic phonon deformation potential and surface roughness scattering on quasi-ballistic transport in ultrascaled Si-MOSFETs. Japanese Journal of Applied Physics, 53 (11) 114301 doi:10.7567/jjap.53.114301
Souma, Satofumi, Ogawa, Matsuto (2020) Impact of electron–phonon scattering on the strain-induced current-blocking effect in graphene field-effect transistors. Journal of Applied Physics, 127 (9). 94304pp. doi:10.1063/1.5133860
Guo, X., Zhou, Y. G. (2013) Band gaps of graphene on layered ZnO substrate: A first principles study. Journal of Applied Physics, 113 (5). 54307pp. doi:10.1063/1.4789627
 
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