Jin, Bo, Kang, Daegun, Kim, Jungsik, Meyyappan, M., Lee, Jeong-Soo (2013) Thermally efficient and highly scalable In2Se3 nanowire phase change memory. Journal of Applied Physics, 113 (16). 164303pp. doi:10.1063/1.4802672
Reference Type | Journal (article/letter/editorial) | ||
---|---|---|---|
Title | Thermally efficient and highly scalable In2Se3 nanowire phase change memory | ||
Journal | Journal of Applied Physics | ||
Authors | Jin, Bo | Author | |
Kang, Daegun | Author | ||
Kim, Jungsik | Author | ||
Meyyappan, M. | Author | ||
Lee, Jeong-Soo | Author | ||
Year | 2013 (April 28) | Volume | 113 |
Issue | 16 | ||
Publisher | AIP Publishing | ||
DOI | doi:10.1063/1.4802672Search in ResearchGate | ||
Generate Citation Formats | |||
Mindat Ref. ID | 5192203 | Long-form Identifier | mindat:1:5:5192203:6 |
GUID | 0 | ||
Full Reference | Jin, Bo, Kang, Daegun, Kim, Jungsik, Meyyappan, M., Lee, Jeong-Soo (2013) Thermally efficient and highly scalable In2Se3 nanowire phase change memory. Journal of Applied Physics, 113 (16). 164303pp. doi:10.1063/1.4802672 | ||
Plain Text | Jin, Bo, Kang, Daegun, Kim, Jungsik, Meyyappan, M., Lee, Jeong-Soo (2013) Thermally efficient and highly scalable In2Se3 nanowire phase change memory. Journal of Applied Physics, 113 (16). 164303pp. doi:10.1063/1.4802672 | ||
In | (2013, April) Journal of Applied Physics Vol. 113 (16) AIP Publishing |
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