Yamashita, Yoshiyuki, Yoshikawa, Hideki, Chikyow, Toyohiro, Kobayashi, Keisuke (2013) Bias-voltage application in a hard x-ray photoelectron spectroscopic study of the interface states at oxide/Si(100) interfaces. Journal of Applied Physics, 113 (16). 163707pp. doi:10.1063/1.4803491
Reference Type | Journal (article/letter/editorial) | ||
---|---|---|---|
Title | Bias-voltage application in a hard x-ray photoelectron spectroscopic study of the interface states at oxide/Si(100) interfaces | ||
Journal | Journal of Applied Physics | ||
Authors | Yamashita, Yoshiyuki | Author | |
Yoshikawa, Hideki | Author | ||
Chikyow, Toyohiro | Author | ||
Kobayashi, Keisuke | Author | ||
Year | 2013 (April 28) | Volume | 113 |
Issue | 16 | ||
Publisher | AIP Publishing | ||
DOI | doi:10.1063/1.4803491Search in ResearchGate | ||
Generate Citation Formats | |||
Mindat Ref. ID | 5192246 | Long-form Identifier | mindat:1:5:5192246:1 |
GUID | 0 | ||
Full Reference | Yamashita, Yoshiyuki, Yoshikawa, Hideki, Chikyow, Toyohiro, Kobayashi, Keisuke (2013) Bias-voltage application in a hard x-ray photoelectron spectroscopic study of the interface states at oxide/Si(100) interfaces. Journal of Applied Physics, 113 (16). 163707pp. doi:10.1063/1.4803491 | ||
Plain Text | Yamashita, Yoshiyuki, Yoshikawa, Hideki, Chikyow, Toyohiro, Kobayashi, Keisuke (2013) Bias-voltage application in a hard x-ray photoelectron spectroscopic study of the interface states at oxide/Si(100) interfaces. Journal of Applied Physics, 113 (16). 163707pp. doi:10.1063/1.4803491 | ||
In | (2013, April) Journal of Applied Physics Vol. 113 (16) AIP Publishing |
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