Ulman, Kanchan, Sathiyanarayanan, Rajesh, Pandey, R. K., Murali, K. V. R. M., Narasimhan, Shobhana (2013) Dielectric properties of Si3−ξGeξN4 and Si3−ξCξN4: A density functional study. Journal of Applied Physics, 113 (23). 234102pp. doi:10.1063/1.4811453
Reference Type | Journal (article/letter/editorial) | ||
---|---|---|---|
Title | Dielectric properties of Si3−ξGeξN4 and Si3−ξCξN4: A density functional study | ||
Journal | Journal of Applied Physics | ||
Authors | Ulman, Kanchan | Author | |
Sathiyanarayanan, Rajesh | Author | ||
Pandey, R. K. | Author | ||
Murali, K. V. R. M. | Author | ||
Narasimhan, Shobhana | Author | ||
Year | 2013 (June 21) | Volume | 113 |
Issue | 23 | ||
Publisher | AIP Publishing | ||
DOI | doi:10.1063/1.4811453Search in ResearchGate | ||
Generate Citation Formats | |||
Mindat Ref. ID | 5193282 | Long-form Identifier | mindat:1:5:5193282:0 |
GUID | 0 | ||
Full Reference | Ulman, Kanchan, Sathiyanarayanan, Rajesh, Pandey, R. K., Murali, K. V. R. M., Narasimhan, Shobhana (2013) Dielectric properties of Si3−ξGeξN4 and Si3−ξCξN4: A density functional study. Journal of Applied Physics, 113 (23). 234102pp. doi:10.1063/1.4811453 | ||
Plain Text | Ulman, Kanchan, Sathiyanarayanan, Rajesh, Pandey, R. K., Murali, K. V. R. M., Narasimhan, Shobhana (2013) Dielectric properties of Si3−ξGeξN4 and Si3−ξCξN4: A density functional study. Journal of Applied Physics, 113 (23). 234102pp. doi:10.1063/1.4811453 | ||
In | (2013, June) Journal of Applied Physics Vol. 113 (23) AIP Publishing |
See Also
These are possibly similar items as determined by title/reference text matching only.