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Will, J., Gröschel, A., Bergmann, C., Spiecker, E., Magerl, A. (2014) Diffusion-driven precipitate growth and ripening of oxygen precipitates in boron doped silicon by dynamical x-ray diffraction. Journal of Applied Physics, 115 (12). 123505pp. doi:10.1063/1.4868586

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Reference TypeJournal (article/letter/editorial)
TitleDiffusion-driven precipitate growth and ripening of oxygen precipitates in boron doped silicon by dynamical x-ray diffraction
JournalJournal of Applied Physics
AuthorsWill, J.Author
Gröschel, A.Author
Bergmann, C.Author
Spiecker, E.Author
Magerl, A.Author
Year2014 (March 28)Volume115
Issue12
PublisherAIP Publishing
DOIdoi:10.1063/1.4868586Search in ResearchGate
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Mindat Ref. ID5196297Long-form Identifiermindat:1:5:5196297:3
GUID0
Full ReferenceWill, J., Gröschel, A., Bergmann, C., Spiecker, E., Magerl, A. (2014) Diffusion-driven precipitate growth and ripening of oxygen precipitates in boron doped silicon by dynamical x-ray diffraction. Journal of Applied Physics, 115 (12). 123505pp. doi:10.1063/1.4868586
Plain TextWill, J., Gröschel, A., Bergmann, C., Spiecker, E., Magerl, A. (2014) Diffusion-driven precipitate growth and ripening of oxygen precipitates in boron doped silicon by dynamical x-ray diffraction. Journal of Applied Physics, 115 (12). 123505pp. doi:10.1063/1.4868586
In(2014, March) Journal of Applied Physics Vol. 115 (12) AIP Publishing

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Will, J., Gröschel, A., Bergmann, C., Weißer, M., Magerl, A. (2014) Growth and nucleation regimes in boron doped silicon by dynamical x-ray diffraction. Applied Physics Letters, 105 (11). 111902pp. doi:10.1063/1.4896184
Gröschel, A., Will, J., Bergmann, C., Magerl, A. (2014) Misfit strain of oxygen precipitates in Czochralski silicon studied with energy-dispersive X-ray diffraction. Journal of Applied Physics, 115 (23). 233507pp. doi:10.1063/1.4883998
Will, Johannes, Gröschel, Alexander, Spiecker, Erdmann, Magerl, Andreas (2014) About precipitates in boron doped Si investigated by dynamical X-ray diffraction. Acta Crystallographica Section A Foundations and Advances, 70. doi:10.1107/s2053273314088159
Will, J., Gröschel, A., Kot, D., Schubert, M. A., Bergmann, C., Steinrück, H.-G., Kissinger, G., Magerl, A. (2013) Oxygen diffusivity in silicon derived from dynamical X-ray diffraction. Journal of Applied Physics, 113 (7). 73508pp. doi:10.1063/1.4792747
Bergmann, Christoph, Gröschel, Alexander, Will, Johannes, Magerl, Andreas (2015) Strain relief via silicon self-interstitial emission in highly boron-doped silicon: A diffuse X-ray scattering study of oxygen precipitation. Journal of Applied Physics, 118 (1). 15707pp. doi:10.1063/1.4926429
Bergmann, Christoph, Will, Johannes, Gröschel, Alexander, Weisser, Matthias, Magerl, Andreas (2014) Radial oxygen precipitation of a 12” CZ silicon crystal studied in-situ with high energy X-ray diffraction. physica status solidi (a), 211 (11). 2450-2454 doi:10.1002/pssa.201400062
Will, J., Gröschel, A., Weißer, M., Magerl, A. (2011) Thickness dependence of the integrated Bragg intensity for statistically disturbed silicon crystals. Applied Physics Letters, 98 (4). 41910pp. doi:10.1063/1.3531761
Grillenberger, Hannes, Magerl, Andreas (2009) In situ investigation of oxygen precipitation in Czochralski-silicon by high energy x-ray diffraction. Journal of Applied Physics, 106 (2). 24910pp. doi:10.1063/1.3177330
Li, Zhen, Will, Johannes, Dong, Peng, Yang, Deren (2017) Thermal history effect on the nucleation of oxygen precipitates in germanium doped Cz-silicon studied by high-energy X-ray diffraction. Journal of Crystal Growth, 479. 46-51 doi:10.1016/j.jcrysgro.2017.09.023
Furusho, Katsuhisa (1964) Study on Precipitates in Oxygen-Doped Silicon Single Crystals by X-Ray Diffraction Micrography. Japanese Journal of Applied Physics, 3 (4) 203-207 doi:10.1143/jjap.3.203
Will, Johannes, Gröschel, Alexander, Bergmann, Christoph, Magerl, Andreas (2012) In-situ measurement of thickness-dependent Pendellösung oscillations from a precipitation process in silicon at 650 °C. physica status solidi (c), 9 (10). 1920-1923 doi:10.1002/pssc.201200064
 
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