Reference Type | Journal (article/letter/editorial) |
---|
Title | Transition from half metal to semiconductor in Li doped g-C4N3 |
---|
Journal | Journal of Applied Physics |
---|
Authors | Hashmi, Arqum | Author |
---|
Hu, Tao | Author |
Hong, Jisang | Author |
Year | 2014 (March 28) | Volume | 115 |
---|
Issue | 12 |
---|
Publisher | AIP Publishing |
---|
DOI | doi:10.1063/1.4869778Search in ResearchGate |
---|
| Generate Citation Formats |
Mindat Ref. ID | 5196372 | Long-form Identifier | mindat:1:5:5196372:3 |
---|
|
GUID | 0 |
---|
Full Reference | Hashmi, Arqum, Hu, Tao, Hong, Jisang (2014) Transition from half metal to semiconductor in Li doped g-C4N3. Journal of Applied Physics, 115 (12). 124312pp. doi:10.1063/1.4869778 |
---|
Plain Text | Hashmi, Arqum, Hu, Tao, Hong, Jisang (2014) Transition from half metal to semiconductor in Li doped g-C4N3. Journal of Applied Physics, 115 (12). 124312pp. doi:10.1063/1.4869778 |
---|
In | (2014, March) Journal of Applied Physics Vol. 115 (12) AIP Publishing |
---|
These are possibly similar items as determined by title/reference text matching only.