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Brochen, Stéphane, Feuillet, Guy, Pernot, Julien (2014) Equivalence of donor and acceptor fits of temperature dependent Hall carrier density and Hall mobility data: Case of ZnO. Journal of Applied Physics, 115 (16). 163706pp. doi:10.1063/1.4871397

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Reference TypeJournal (article/letter/editorial)
TitleEquivalence of donor and acceptor fits of temperature dependent Hall carrier density and Hall mobility data: Case of ZnO
JournalJournal of Applied Physics
AuthorsBrochen, StéphaneAuthor
Feuillet, GuyAuthor
Pernot, JulienAuthor
Year2014 (April 28)Volume115
Issue16
PublisherAIP Publishing
DOIdoi:10.1063/1.4871397Search in ResearchGate
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Mindat Ref. ID5196612Long-form Identifiermindat:1:5:5196612:8
GUID0
Full ReferenceBrochen, Stéphane, Feuillet, Guy, Pernot, Julien (2014) Equivalence of donor and acceptor fits of temperature dependent Hall carrier density and Hall mobility data: Case of ZnO. Journal of Applied Physics, 115 (16). 163706pp. doi:10.1063/1.4871397
Plain TextBrochen, Stéphane, Feuillet, Guy, Pernot, Julien (2014) Equivalence of donor and acceptor fits of temperature dependent Hall carrier density and Hall mobility data: Case of ZnO. Journal of Applied Physics, 115 (16). 163706pp. doi:10.1063/1.4871397
In(2014, April) Journal of Applied Physics Vol. 115 (16) AIP Publishing

See Also

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Look, D. C. (1987) Equivalence of donor and acceptor fits to temperature‐dependent Hall data: General case. Journal of Applied Physics, 62 (9). 3998-3999 doi:10.1063/1.339204
Brochen, Stéphane, Lafossas, Matthieu, Robin, Ivan-Christophe, Ferret, Pierre, Gemain, Frédérique, Pernot, Julien, Feuillet, Guy (2014) Residual and intentional n-type doping of ZnO thin films grown by metal-organic vapor phase epitaxy on sapphire and ZnO substrates. Journal of Applied Physics, 115 (11). 113508pp. doi:10.1063/1.4868591
Look, D. C., Sizelove, J. R. (1987) Equivalence of donor and acceptor fits of temperature‐dependent carrier‐concentration data. Journal of Applied Physics, 61 (4). 1650-1652 doi:10.1063/1.338054
Brochen, Stéphane, Feuillet, Guy, Santailler, Jean-Louis, Obrecht, Rémy, Lafossas, Matthieu, Ferret, Pierre, Chauveau, Jean-Michel, Pernot, Julien (2017) Non-metal to metal transition in n-type ZnO single crystal materials. Journal of Applied Physics, 121 (9). 95704pp. doi:10.1063/1.4977506
Brochen, S., Granier, C., Feuillet, G., Pernot, J. (2012) Role of deep and shallow donor levels on n-type conductivity of hydrothermal ZnO. Applied Physics Letters, 100 (5). 52115pp. doi:10.1063/1.3681168
Chicot, Gauthier, Muret, Pierre, Santailler, Jean-Louis, Feuillet, Guy, Pernot, Julien (2014) Oxygen vacancy andEC− 1 eV electron trap in ZnO. Journal of Physics D: Applied Physics, 47. 465103pp. doi:10.1088/0022-3727/47/46/465103
Perillat-Merceroz, Guillaume, Gergaud, Patrice, Marotel, Pascal, Brochen, Stephane, Jouneau, Pierre-Henri, Feuillet, Guy (2011) Formation and annealing of dislocation loops induced by nitrogen implantation of ZnO. Journal of Applied Physics, 109 (2). 23513pp. doi:10.1063/1.3537917
Iwata, Hisaomi, Itoh, Kohei M. (2001) Donor and acceptor concentration dependence of the electron Hall mobility and the Hall scattering factor in n-type 4H– and 6H–SiC. Journal of Applied Physics, 89 (11). 6228-6234 doi:10.1063/1.1366660
Heyman, J. N., Bell, D., Khumalo, T. (2006) Terahertz photo-Hall measurements of carrier mobility in GaAs and InP. Applied Physics Letters, 88 (16). 162104pp. doi:10.1063/1.2187520
Dumin, D. J., Ross, E. C. (1970) Temperature Dependence of the Hall Mobility and Carrier Concentration in Silicon‐on‐Sapphire Films. Journal of Applied Physics, 41 (7). 3139-3143 doi:10.1063/1.1659376
Brochen, Stéphane, Brault, Julien, Chenot, Sébastien, Dussaigne, Amélie, Leroux, Mathieu, Damilano, Benjamin (2013) Dependence of the Mg-related acceptor ionization energy with the acceptor concentration in p-type GaN layers grown by molecular beam epitaxy. Applied Physics Letters, 103 (3). 32102pp. doi:10.1063/1.4813598
 
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