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Wen, Guozhi, Zeng, Xiangbin, Wen, Xixin, Liao, Wugang (2014) Photoluminescence properties and crystallization of silicon quantum dots in hydrogenated amorphous Si-rich silicon carbide films. Journal of Applied Physics, 115 (16). 164303pp. doi:10.1063/1.4871980

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Reference TypeJournal (article/letter/editorial)
TitlePhotoluminescence properties and crystallization of silicon quantum dots in hydrogenated amorphous Si-rich silicon carbide films
JournalJournal of Applied Physics
AuthorsWen, GuozhiAuthor
Zeng, XiangbinAuthor
Wen, XixinAuthor
Liao, WugangAuthor
Year2014 (April 28)Volume115
Issue16
PublisherAIP Publishing
DOIdoi:10.1063/1.4871980Search in ResearchGate
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Mindat Ref. ID5196624Long-form Identifiermindat:1:5:5196624:3
GUID0
Full ReferenceWen, Guozhi, Zeng, Xiangbin, Wen, Xixin, Liao, Wugang (2014) Photoluminescence properties and crystallization of silicon quantum dots in hydrogenated amorphous Si-rich silicon carbide films. Journal of Applied Physics, 115 (16). 164303pp. doi:10.1063/1.4871980
Plain TextWen, Guozhi, Zeng, Xiangbin, Wen, Xixin, Liao, Wugang (2014) Photoluminescence properties and crystallization of silicon quantum dots in hydrogenated amorphous Si-rich silicon carbide films. Journal of Applied Physics, 115 (16). 164303pp. doi:10.1063/1.4871980
In(2014, April) Journal of Applied Physics Vol. 115 (16) AIP Publishing

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Zeng, Xiangbin, Liao, Wugang, Wen, Guozhi, Wen, Xixing, Zheng, Wenjun (2014) Structural evolution and photoluminescence of annealed Si-rich nitride with Si quantum dots prepared by plasma enhanced chemical vapor deposition. Journal of Applied Physics, 115 (15). 154314pp. doi:10.1063/1.4872321
Wen, Xixing, Zeng, Xiangbin, Zheng, Wenjun, Liao, Wugang, Feng, Feng (2015) Charging/discharging behavior and mechanism of silicon quantum dots embedded in amorphous silicon carbide films. Journal of Applied Physics, 117 (2). 24304pp. doi:10.1063/1.4905614
Wen, Guozhi, Zeng, Xiangbin, Li, Xianghu (2016) The influence of annealing temperature on the synthesis of silicon quantum dots embedded in hydrogenated amorphous Si-rich silicon carbide matrix. Journal of Non-Crystalline Solids, 441. 10-15 doi:10.1016/j.jnoncrysol.2016.03.006
Wen, Xixing, Zeng, Xiangbin, Liao, Wugang, Wen, Yangyang, Chen, Xiaoxiao (2015) Microstructure evolution and energy band alignment at the interface of a Si-rich amorphous silicon carbide/c-Si heterostructure. Journal of Physics D: Applied Physics, 48. 455307pp. doi:10.1088/0022-3727/48/45/455307
Liao, Wugang, Zeng, Xiangbin, Yao, Wei, Wen, Xixing (2015) Photoluminescence and carrier transport mechanisms of silicon-rich silicon nitride light emitting device. Applied Surface Science, 351. 1053-1059 doi:10.1016/j.apsusc.2015.06.050
Wen, Guozhi, Fan, Jijun, Li, Xianghu, Liu, Yuanyuan (2017) The influence of local Si C bonding density on the photoluminescence of Si-QDs upon thermal annealing the hydrogenated amorphous Si-rich silicon carbide thin films. Journal of Non-Crystalline Solids, 463. 50-55 doi:10.1016/j.jnoncrysol.2017.02.016
Chen, Xiaobo (2014) Fabrication and characterization of high density silicon quantum dots in gradient Si-rich carbide films. Modern Physics Letters B, 28. 1450215pp. doi:10.1142/s0217984914502157
Tang, Yi, Braunstein, R. (1995) Effects of deposition conditions on transport properties of intrinsic hydrogenated amorphous silicon and hydrogenated amorphous silicon carbide films investigated by the photomixing technique. Applied Physics Letters, 66 (6). 721-723 doi:10.1063/1.114111
Liao, Wen-Shiang, Lee, Si-Chen (1997) Novel Low-Temperature Double Passivation Layer in Hydrogenated Amorphous Silicon Thin Film Transistors. Japanese Journal of Applied Physics, 36. 2073-2076 doi:10.1143/jjap.36.2073
Li, Mingming, Jiang, Lihua, Sun, Yihua, Xiao, Ting, Xiang, Peng, Tan, Xinyu (2018) Silicon content influence on structure and photoluminescence properties of carbon rich hydrogenated amorphous silicon carbide thin films. Journal of Alloys and Compounds, 753. 320-328 doi:10.1016/j.jallcom.2018.04.226
Hao, H. L., Wu, L. K., Shen, W. Z. (2008) Controlling the red luminescence from silicon quantum dots in hydrogenated amorphous silicon nitride films. Applied Physics Letters, 92 (12). 121922pp. doi:10.1063/1.2902296
 
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