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Molaei, R., Bayati, R., Wu, F., Narayan, J. (2014) A microstructural approach toward the effect of thickness on semiconductor-to-metal transition characteristics of VO2 epilayers. Journal of Applied Physics, 115 (16). 164311pp. doi:10.1063/1.4872030

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Reference TypeJournal (article/letter/editorial)
TitleA microstructural approach toward the effect of thickness on semiconductor-to-metal transition characteristics of VO2 epilayers
JournalJournal of Applied Physics
AuthorsMolaei, R.Author
Bayati, R.Author
Wu, F.Author
Narayan, J.Author
Year2014 (April 28)Volume115
Issue16
PublisherAIP Publishing
DOIdoi:10.1063/1.4872030Search in ResearchGate
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Mindat Ref. ID5196625Long-form Identifiermindat:1:5:5196625:2
GUID0
Full ReferenceMolaei, R., Bayati, R., Wu, F., Narayan, J. (2014) A microstructural approach toward the effect of thickness on semiconductor-to-metal transition characteristics of VO2 epilayers. Journal of Applied Physics, 115 (16). 164311pp. doi:10.1063/1.4872030
Plain TextMolaei, R., Bayati, R., Wu, F., Narayan, J. (2014) A microstructural approach toward the effect of thickness on semiconductor-to-metal transition characteristics of VO2 epilayers. Journal of Applied Physics, 115 (16). 164311pp. doi:10.1063/1.4872030
In(2014, April) Journal of Applied Physics Vol. 115 (16) AIP Publishing

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Bayati, M. R., Molaei, R., Budai, J. D., Narayan, R. J., Narayan, J. (2013) Role of substrate crystallographic characteristics on structure and properties of rutile TiO2 epilayers. Journal of Applied Physics, 114 (4). 44314pp. doi:10.1063/1.4816470
Gupta, A., Aggarwal, R., Gupta, P., Dutta, T., Narayan, Roger J., Narayan, J. (2009) Semiconductor to metal transition characteristics of VO2 thin films grown epitaxially on Si (001). Applied Physics Letters, 95 (11). 111915pp. doi:10.1063/1.3232241
Molaei, R., Bayati, R., Nori, S., Kumar, D., Prater, J. T., Narayan, J. (2013) Diamagnetic to ferromagnetic switching in VO2 epitaxial thin films by nanosecond excimer laser treatment. Applied Physics Letters, 103 (25). 252109pp. doi:10.1063/1.4857155
Yang, Tsung-Han, Aggarwal, Ravi, Gupta, Alok, Zhou, Honghui, Narayan, Roger J., Narayan, J. (2010) Semiconductor-metal transition characteristics of VO2 thin films grown on c- and r-sapphire substrates. Journal of Applied Physics, 107 (5). 53514pp. doi:10.1063/1.3327241
Molaei, Roya, Bayati, Mohammad Reza, Narayan, Jagdish (2012) Thin film epitaxy and near bulk semiconductor to metal transition in VO2/NiO/YSZ/Si(001) heterostructures. Journal of Materials Research, 27 (24) 3103-3109 doi:10.1557/jmr.2012.374
Bayati, Reza, Molaei, Roya, Wu, Fan, Narayan, Jagdish, Yarmolenko, Sergey (2015) Dependence of Semiconductor to Metal Transition of VO2(011)/NiO{100}/MgO{100}/TiN{100}/Si{100} Heterostructures on Thin Film Epitaxy and Nature of Strain. Journal of the American Ceramic Society, 98 (4). 1201-1208 doi:10.1111/jace.13454
Yang, Tsung-Han, Jin, Chunming, Zhou, Honghui, Narayan, Roger J., Narayan, J. (2010) Role of twin boundaries in semiconductor to metal transition characteristics of VO2 films. Applied Physics Letters, 97 (7). 72101pp. doi:10.1063/1.3481075
Bayati, M. R., Joshi, S., Molaei, R., Narayan, R. J., Narayan, J. (2013) Ultrafast switching in wetting properties of TiO2/YSZ/Si(001) epitaxial heterostructures induced by laser irradiation. Journal of Applied Physics, 113 (6). 63706pp. doi:10.1063/1.4790327
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Bayati, M. R., Molaei, R., Narayan, R. J., Narayan, J., Zhou, H., Pennycook, S. J. (2012) Domain epitaxy in TiO2/α-Al2O3 thin film heterostructures with Ti2O3 transient layer. Applied Physics Letters, 100 (25). 251606pp. doi:10.1063/1.4729937
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