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Mundle, R., Pradhan, A. K. (2014) Electrical response in atomic layer deposited Al:ZnO with varying stack thickness. Journal of Applied Physics, 115 (18). 183503pp. doi:10.1063/1.4875536

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Reference TypeJournal (article/letter/editorial)
TitleElectrical response in atomic layer deposited Al:ZnO with varying stack thickness
JournalJournal of Applied Physics
AuthorsMundle, R.Author
Pradhan, A. K.Author
Year2014 (May 14)Volume115
Issue18
PublisherAIP Publishing
DOIdoi:10.1063/1.4875536Search in ResearchGate
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Mindat Ref. ID5197385Long-form Identifiermindat:1:5:5197385:4
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Full ReferenceMundle, R., Pradhan, A. K. (2014) Electrical response in atomic layer deposited Al:ZnO with varying stack thickness. Journal of Applied Physics, 115 (18). 183503pp. doi:10.1063/1.4875536
Plain TextMundle, R., Pradhan, A. K. (2014) Electrical response in atomic layer deposited Al:ZnO with varying stack thickness. Journal of Applied Physics, 115 (18). 183503pp. doi:10.1063/1.4875536
In(2014, May) Journal of Applied Physics Vol. 115 (18) AIP Publishing

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Bamiduro, O., Mustafa, H., Mundle, R., Konda, R. B., Pradhan, A. K. (2007) Metal-like conductivity in transparent Al:ZnO films. Applied Physics Letters, 90 (25). 252108pp. doi:10.1063/1.2749836
Roul, Monee K., Obasogie, Brandon, Kogo, Gilbert, Skuza, J. R., Mundle, R. M., Pradhan, A. K. (2017) Transparent and flexible heaters based on Al:ZnO degenerate semiconductor. Journal of Applied Physics, 122 (13). 135110pp. doi:10.1063/1.4992007
Mundle, R, Terry, Hampton, Bahoura, M, Pradhan, A K (2013) Ozone-assisted atomic layer deposited ZnO thin films for multifunctional device applications. Journal of Physics D: Applied Physics, 46. 475101pp. doi:10.1088/0022-3727/46/47/475101
Mundle, Rajeh, Carvajal, Christian, Pradhan, Aswini K. (2016) ZnO/Al:ZnO Transparent Resistive Switching Devices Grown by Atomic Layer Deposition for Memristor Applications. Langmuir, 32. 4983-4995 doi:10.1021/acs.langmuir.6b01014
Pradhan, A. K., Douglas, L., Mustafa, H., Mundle, R., Hunter, D., Bonner, C. E. (2007) Pulsed-laser deposited Er:ZnO films for 1.54μm emission. Applied Physics Letters, 90 (7). 72108pp. doi:10.1063/1.2560764
Ishii, Hiroyuki, Nakajima, Anri, Yokoyama, Shin (2004) Growth and electrical properties of atomic-layer deposited ZrO2/Si-nitride stack gate dielectrics. Journal of Applied Physics, 95 (2). 536-542 doi:10.1063/1.1629773
Bhuyian, M. N., Sengupta, R., Vurikiti, P., Misra, D. (2016) Oxygen vacancy defect engineering using atomic layer deposited HfAlOx in multi-layered gate stack. Applied Physics Letters, 108 (18). 183501pp. doi:10.1063/1.4948583
Long, Rong, Dunn, Martin L. (2014) Channel cracks in atomic-layer and molecular-layer deposited multilayer thin film coatings. Journal of Applied Physics, 115 (23). 233514pp. doi:10.1063/1.4884438
Zhu, Shiyang, Nakajima, Anri (2008) Bias temperature instability in metal-oxide-semiconductor field-effect transistors with atomic-layer-deposited Si-nitride/SiO2 stack gate dielectrics. Journal of Applied Physics, 103 (8). 84512pp. doi:10.1063/1.2907768
Etinger-Geller, Yael, Zoubenko, Ekaterina, Baskin, Maria, Kornblum, Lior, Pokroy, Boaz (2019) Thickness dependence of the physical properties of atomic-layer deposited Al2O3. Journal of Applied Physics, 125 (18). 185302pp. doi:10.1063/1.5079987
Holloway, Terence, Mundle, Rajeh, Dondapati, Hareesh, Bahoura, M., Pradhan, A.K. (2012) Aligned Al:ZnO nanorods on Si with different barrier layers for optoelectronic applications. Chemical Physics Letters, 534. 48-53 doi:10.1016/j.cplett.2012.03.028
 
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