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Kovačević, Goran, Pivac, Branko (2014) Structure, defects, and strain in silicon-silicon oxide interfaces. Journal of Applied Physics, 115 (4). 43531pp. doi:10.1063/1.4862809

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Reference TypeJournal (article/letter/editorial)
TitleStructure, defects, and strain in silicon-silicon oxide interfaces
JournalJournal of Applied Physics
AuthorsKovačević, GoranAuthor
Pivac, BrankoAuthor
Year2014 (January 28)Volume115
Issue4
PublisherAIP Publishing
DOIdoi:10.1063/1.4862809Search in ResearchGate
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Mindat Ref. ID5198144Long-form Identifiermindat:1:5:5198144:6
GUID0
Full ReferenceKovačević, Goran, Pivac, Branko (2014) Structure, defects, and strain in silicon-silicon oxide interfaces. Journal of Applied Physics, 115 (4). 43531pp. doi:10.1063/1.4862809
Plain TextKovačević, Goran, Pivac, Branko (2014) Structure, defects, and strain in silicon-silicon oxide interfaces. Journal of Applied Physics, 115 (4). 43531pp. doi:10.1063/1.4862809
In(2014, January) Journal of Applied Physics Vol. 115 (4) AIP Publishing

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Kovačević, Goran, Pivac, Branko (2013) Modeling the interface between crystalline silicon and silicon oxide polymorphs. physica status solidi (a), 210 (4). 717-722 doi:10.1002/pssa.201200447
Kovačević, Goran, Pivac, Branko (2017) Reactions in silicon–nitrogen plasma. Physical Chemistry Chemical Physics, 19 (5). 3826-3836 doi:10.1039/c6cp05395e
Pivac, Branko (2012) The origin of 0.78 eV line of the dislocation related luminescence in silicon. Journal of Applied Physics, 112 (6). 63528pp. doi:10.1063/1.4754825
Jaiswal, Neeraj K., Kovačević, Goran, Pivac, Branko (2015) Reconstructed graphene nanoribbon as a sensor for nitrogen based molecules. Applied Surface Science, 357. 55-59 doi:10.1016/j.apsusc.2015.08.219
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Gupta, Pranav, Narayan, Jagdish (2014) Integration and structural analysis of strain relaxed bi-epitaxial zinc oxide(0001) thin film with silicon(100) using titanium nitride buffer layer. Journal of Applied Physics, 115 (4). 43513pp. doi:10.1063/1.4861638
Ettisserry, D. P., Goldsman, N., Lelis, A. (2014) A methodology to identify and quantify mobility-reducing defects in 4H-silicon carbide power metal-oxide-semiconductor field-effect transistors. Journal of Applied Physics, 115 (10). 103706pp. doi:10.1063/1.4868579
Pivac, B, Kovačević, I, Borjanović, V (2002) Defects in carbon and oxygen implanted p-type silicon. Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 186 (1). 355-359 doi:10.1016/s0168-583x(01)00917-x
Geddo, M., Pivac, B., Borghesi, A., Stella, A., Pedrotti, M. (1991) Interstitial oxygen determination near epitaxial silicon and Czochralski silicon interface. Applied Physics Letters, 58 (4). 370-372 doi:10.1063/1.104637
Borghesi, A., Pivac, B., Sassella, A., Stella, A. (1995) Oxygen precipitation in silicon. Journal of Applied Physics, 77 (9). 4169-4244 doi:10.1063/1.359479
Bernstorff, S., Dubček, P., Pivac, B., Kovačević, I., Sassella, A., Borghesi, A. (2006) XRR and GISAXS study of silicon oxynitride films. Applied Surface Science, 253. 33-37 doi:10.1016/j.apsusc.2006.05.068
 
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