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Deng, Xiaodi, Song, Yixu, Li, JinChun, Pu, Yikang (2014) Parametrization of the Stillinger-Weber potential for Si/N/H system and its application to simulations of silicon nitride film deposition with SiH4/NH3. Journal of Applied Physics, 115 (5). 54902pp. doi:10.1063/1.4863841

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Reference TypeJournal (article/letter/editorial)
TitleParametrization of the Stillinger-Weber potential for Si/N/H system and its application to simulations of silicon nitride film deposition with SiH4/NH3
JournalJournal of Applied Physics
AuthorsDeng, XiaodiAuthor
Song, YixuAuthor
Li, JinChunAuthor
Pu, YikangAuthor
Year2014 (February 7)Volume115
Issue5
PublisherAIP Publishing
DOIdoi:10.1063/1.4863841Search in ResearchGate
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Mindat Ref. ID5198286Long-form Identifiermindat:1:5:5198286:1
GUID0
Full ReferenceDeng, Xiaodi, Song, Yixu, Li, JinChun, Pu, Yikang (2014) Parametrization of the Stillinger-Weber potential for Si/N/H system and its application to simulations of silicon nitride film deposition with SiH4/NH3. Journal of Applied Physics, 115 (5). 54902pp. doi:10.1063/1.4863841
Plain TextDeng, Xiaodi, Song, Yixu, Li, JinChun, Pu, Yikang (2014) Parametrization of the Stillinger-Weber potential for Si/N/H system and its application to simulations of silicon nitride film deposition with SiH4/NH3. Journal of Applied Physics, 115 (5). 54902pp. doi:10.1063/1.4863841
In(2014, February) Journal of Applied Physics Vol. 115 (5) AIP Publishing

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Deng, Xiaodi, Song, Yixu, Li, Jinchun, Pu, Yikang (2014) Interaction of tetraethoxysilane with OH-terminated SiO2 (001) surface: A first principles study. Applied Surface Science, 305. 247-251 doi:10.1016/j.apsusc.2014.03.048
Livengood, R. E., Hess, D. W. (1987) Plasma enhanced chemical vapor deposition of fluorinated silicon nitride using SiH4‐NH3‐NF3mixtures. Applied Physics Letters, 50 (10). 560-562 doi:10.1063/1.98134
LEE, Su Jin, KIM, Byungwhan (2010) Deposition of silicon nitride film at room temperature using a SiH4-NH3-N2 plasma. Journal of the Ceramic Society of Japan, 118 (1384) 1188-1191 doi:10.2109/jcersj2.118.1188
Jiang, Jin-Wu, Park, Harold S., Rabczuk, Timon (2013) Molecular dynamics simulations of single-layer molybdenum disulphide (MoS2): Stillinger-Weber parametrization, mechanical properties, and thermal conductivity. Journal of Applied Physics, 114 (6). 64307pp. doi:10.1063/1.4818414
Ling, C. H., Kwok, C. Y., Prasad, K. (1986) Silicon Nitride Films Prepared by Plasma-Enhanced Chemical Vapour Deposition (PECVD) of SiH4/NH3/N2Mixtures: Some Physical Properties. Japanese Journal of Applied Physics, 25. 1490-1494 doi:10.1143/jjap.25.1490
Pizzagalli, L, Godet, J, GuĂ©nolĂ©, J, Brochard, S, Holmstrom, E, Nordlund, K, Albaret, T (2013) A new parametrization of the Stillinger–Weber potential for an improved description of defects and plasticity of silicon. Journal of Physics: Condensed Matter, 25 (5). 55801pp. doi:10.1088/0953-8984/25/5/055801
van den Oever, P. J., van Helden, J. H., van Hemmen, J. L., Engeln, R., Schram, D. C., van de Sanden, M. C. M., Kessels, W. M. M. (2006) N, NH, and NH2 radical densities in a remote Ar–NH3–SiH4 plasma and their role in silicon nitride deposition. Journal of Applied Physics, 100 (9). 93303pp. doi:10.1063/1.2358330
Zheng, Jie, Song, Xubo, Li, Xingguo, Pu, Yikang (2008) Large-Scale Production of Amorphous Silicon Oxynitride Nanowires by Nickel-Catalyzed Transformation of Silicon Wafers in NH3 Plasma. The Journal of Physical Chemistry C, 112 (1). 27-34 doi:10.1021/jp075313w
Farjas, J., Roura, P. (2007) Oxidation of silicon: Further tests for the interfacial silicon emission model. Journal of Applied Physics, 102 (5). 54902pp. doi:10.1063/1.2773693
Liu, Xue Jian, Huang, Zhi Yong, Huang, Li Ping (2004) Silicon Nitride Films Deposited by Low Pressure Chemical Vapor Deposition from SiH4-NH3-N2 System. Key Engineering Materials, 264. 643-648 doi:10.4028/www.scientific.net/kem.264-268.643
Zeng, Xiangbin, Liao, Wugang, Wen, Guozhi, Wen, Xixing, Zheng, Wenjun (2014) Structural evolution and photoluminescence of annealed Si-rich nitride with Si quantum dots prepared by plasma enhanced chemical vapor deposition. Journal of Applied Physics, 115 (15). 154314pp. doi:10.1063/1.4872321
 
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