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Kim, Jaehwan, Min, Daehong, Jang, Jongjin, Lee, Kyuseung, Chae, Sooryong, Nam, Okhyun (2014) Strain relaxation of thick (11–22) semipolar InGaN layer for long wavelength nitride-based device. Journal of Applied Physics, 116 (16). 163109pp. doi:10.1063/1.4900738

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Reference TypeJournal (article/letter/editorial)
TitleStrain relaxation of thick (11–22) semipolar InGaN layer for long wavelength nitride-based device
JournalJournal of Applied Physics
AuthorsKim, JaehwanAuthor
Min, DaehongAuthor
Jang, JongjinAuthor
Lee, KyuseungAuthor
Chae, SooryongAuthor
Nam, OkhyunAuthor
Year2014 (October 28)Volume116
Issue16
PublisherAIP Publishing
DOIdoi:10.1063/1.4900738Search in ResearchGate
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Mindat Ref. ID5199249Long-form Identifiermindat:1:5:5199249:7
GUID0
Full ReferenceKim, Jaehwan, Min, Daehong, Jang, Jongjin, Lee, Kyuseung, Chae, Sooryong, Nam, Okhyun (2014) Strain relaxation of thick (11–22) semipolar InGaN layer for long wavelength nitride-based device. Journal of Applied Physics, 116 (16). 163109pp. doi:10.1063/1.4900738
Plain TextKim, Jaehwan, Min, Daehong, Jang, Jongjin, Lee, Kyuseung, Chae, Sooryong, Nam, Okhyun (2014) Strain relaxation of thick (11–22) semipolar InGaN layer for long wavelength nitride-based device. Journal of Applied Physics, 116 (16). 163109pp. doi:10.1063/1.4900738
In(2014, October) Journal of Applied Physics Vol. 116 (16) AIP Publishing

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Kim, Jaehwan, Min, Daehong, Jang, Jongjin, Lee, Kyuseung, Chae, Sooryong, Nam, Okhyun (2015) Comparison between the relaxation mechanisms of thick (0001) polar and $(11\bar{2}2)$ semipolar InGaN layers. Japanese Journal of Applied Physics, 54 (2) 2 doi:10.7567/jjap.54.02ba02
Chae, Sooryong, Lee, Kyuseung, Jang, Jongjin, Min, Daehong, Kim, Jaehwan, Nam, Okhyun (2015) Self-assembled growth of inclined GaN nanorods on (10−10) m-plane sapphire using metal–organic chemical vapor deposition. Journal of Crystal Growth, 409. 65-70 doi:10.1016/j.jcrysgro.2014.09.040
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Lee, Seunga, Honda, Yoshio, Amano, Hiroshi, Jang, Jongjin, Nam, Okhyun (2016) Study of enhanced photovoltaic behavior in InGaN-based solar cells by using SiNxinsertion layer: Influence of dislocations. Japanese Journal of Applied Physics, 55 (3) 30306 doi:10.7567/jjap.55.030306
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