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Yan, Di, Cuevas, Andres (2014) Empirical determination of the energy band gap narrowing in p+silicon heavily doped with boron. Journal of Applied Physics, 116 (19). 194505pp. doi:10.1063/1.4902066

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Reference TypeJournal (article/letter/editorial)
TitleEmpirical determination of the energy band gap narrowing in p+silicon heavily doped with boron
JournalJournal of Applied Physics
AuthorsYan, DiAuthor
Cuevas, AndresAuthor
Year2014 (November 21)Volume116
Issue19
PublisherAIP Publishing
DOIdoi:10.1063/1.4902066Search in ResearchGate
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Mindat Ref. ID5199421Long-form Identifiermindat:1:5:5199421:9
GUID0
Full ReferenceYan, Di, Cuevas, Andres (2014) Empirical determination of the energy band gap narrowing in p+silicon heavily doped with boron. Journal of Applied Physics, 116 (19). 194505pp. doi:10.1063/1.4902066
Plain TextYan, Di, Cuevas, Andres (2014) Empirical determination of the energy band gap narrowing in p+silicon heavily doped with boron. Journal of Applied Physics, 116 (19). 194505pp. doi:10.1063/1.4902066
In(2014, November) Journal of Applied Physics Vol. 116 (19) AIP Publishing

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Yan, Di, Cuevas, Andres (2013) Empirical determination of the energy band gap narrowing in highly doped n+ silicon. Journal of Applied Physics, 114 (4). 44508pp. doi:10.1063/1.4816694
Wagner, Joachim, del Alamo, JesĆŗs A. (1988) Bandā€gap narrowing in heavily doped silicon: A comparison of optical and electrical data. Journal of Applied Physics, 63 (2). 425-429 doi:10.1063/1.340257
Bennett, Herbert S., Wilson, Charles L. (1984) Statistical comparisons of data on bandā€gap narrowing in heavily doped silicon: Electrical and optical measurements. Journal of Applied Physics, 55 (10). 3582-3587 doi:10.1063/1.332950
Torigoe, Kazuhisa, Fujise, Jun, Ono, Toshiaki, Nakamura, Kozo (2014) Enhanced diffusion of oxygen depending on Fermi level position in heavily boron-doped silicon. Journal of Applied Physics, 116 (19). 193503pp. doi:10.1063/1.4901987
Yan, B. P., Luo, J. S., Zhang, Q. L. (1995) Study of bandā€gap narrowing effect and nonradiative recombination centers for heavily Cā€doped GaAs by photoluminescence spectroscopy. Journal of Applied Physics, 77 (9). 4822-4824 doi:10.1063/1.359406
Baker-Finch, Simeon C., McIntosh, Keith R., Yan, Di, Fong, Kean Chern, Kho, Teng C. (2014) Near-infrared free carrier absorption in heavily doped silicon. Journal of Applied Physics, 116 (6). 63106pp. doi:10.1063/1.4893176
Lu, Z. H., Hanna, M. C., Majerfeld, A. (1994) Determination of band gap narrowing and hole density for heavily Cā€doped GaAs by photoluminescence spectroscopy. Applied Physics Letters, 64 (1). 88-90 doi:10.1063/1.110877
Yan, Di, Cuevas, Andres, Phang, Sieu Pheng, Wan, Yimao, Macdonald, Daniel (2018) 23% efficient p-type crystalline silicon solar cells with hole-selective passivating contacts based on physical vapor deposition of doped silicon films. Applied Physics Letters, 113 (6). 61603pp. doi:10.1063/1.5037610
Dahlinger, Morris, Carstens, Kai (2016) Band gap narrowing models tested on low recombination phosphorus laser doped silicon. Journal of Applied Physics, 120 (15). 155701pp. doi:10.1063/1.4964950
Xu, Jin, Ji, Chuan, Zhang, Guangchao (2014) Effect of rapid thermal processing on copper precipitation in p/p+ silicon epitaxial wafers with heavily boron-doped substrates. Journal of Applied Physics, 115 (2). 24505pp. doi:10.1063/1.4862179
Wan, Yimao, Yan, Di, Bullock, James, Zhang, Xinyu, Cuevas, Andres (2015) Passivation of c-Si surfaces by sub-nm amorphous silicon capped with silicon nitride. Applied Physics Letters, 107 (23). 231606pp. doi:10.1063/1.4937732
 
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