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Aho, A., Korpijärvi, V.-M., Tukiainen, A., Puustinen, J., Guina, M. (2014) Incorporation model of N into GaInNAs alloys grown by radio-frequency plasma-assisted molecular beam epitaxy. Journal of Applied Physics, 116 (21). 213101pp. doi:10.1063/1.4903318

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Reference TypeJournal (article/letter/editorial)
TitleIncorporation model of N into GaInNAs alloys grown by radio-frequency plasma-assisted molecular beam epitaxy
JournalJournal of Applied Physics
AuthorsAho, A.Author
Korpijärvi, V.-M.Author
Tukiainen, A.Author
Puustinen, J.Author
Guina, M.Author
Year2014 (December 7)Volume116
Issue21
PublisherAIP Publishing
DOIdoi:10.1063/1.4903318Search in ResearchGate
Generate Citation Formats
Mindat Ref. ID5199611Long-form Identifiermindat:1:5:5199611:0
GUID0
Full ReferenceAho, A., Korpijärvi, V.-M., Tukiainen, A., Puustinen, J., Guina, M. (2014) Incorporation model of N into GaInNAs alloys grown by radio-frequency plasma-assisted molecular beam epitaxy. Journal of Applied Physics, 116 (21). 213101pp. doi:10.1063/1.4903318
Plain TextAho, A., Korpijärvi, V.-M., Tukiainen, A., Puustinen, J., Guina, M. (2014) Incorporation model of N into GaInNAs alloys grown by radio-frequency plasma-assisted molecular beam epitaxy. Journal of Applied Physics, 116 (21). 213101pp. doi:10.1063/1.4903318
In(2014, December) Journal of Applied Physics Vol. 116 (21) AIP Publishing

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Korpijärvi, V.-M., Aho, A., Laukkanen, P., Tukiainen, A., Laakso, A., Tuominen, M., Guina, M. (2012) Study of nitrogen incorporation into GaInNAs: The role of growth temperature in molecular beam epitaxy. Journal of Applied Physics, 112 (2). 23504pp. doi:10.1063/1.4737127
Korpijärvi, V.-M., Guina, M., Puustinen, J., Tuomisto, P., Rautiainen, J., Härkönen, A., Tukiainen, A., Okhotnikov, O., Pessa, M. (2009) MBE grown GaInNAs-based multi-Watt disk lasers. Journal of Crystal Growth, 311 (7). 1868-1871 doi:10.1016/j.jcrysgro.2008.10.083
Aho, A., Korpijärvi, V.-M., Isoaho, R., Malinen, P., Tukiainen, A., Honkanen, M., Guina, M. (2016) Determination of composition and energy gaps of GaInNAsSb layers grown by MBE. Journal of Crystal Growth, 438. 49-54 doi:10.1016/j.jcrysgro.2015.12.026
Liu, H. F., Xiang, N., Chua, S. J. (2006) Influence of N incorporation on In content in GaInNAs∕GaNAs quantum wells grown by plasma-assisted molecular beam epitaxy. Applied Physics Letters, 89 (7). 71905pp. doi:10.1063/1.2335804
Storm, D. F., Katzer, D. S., Meyer, D. J., Binari, S. C. (2012) Oxygen incorporation in homoepitaxial N-polar GaN grown by radio frequency-plasma assisted molecular beam epitaxy: Mitigation and modeling. Journal of Applied Physics, 112 (1). 13507pp. doi:10.1063/1.4732457
Pinault, M.-A., Freundlich, A., Coaquira, J. A. H., Fotkatzikis, A. (2005) High nitrogen incorporation in GaAsN epilayers grown by chemical beam epitaxy using radio-frequency plasma source. Journal of Applied Physics, 98 (2). 23522pp. doi:10.1063/1.1996853
Kudrawiec, R., Gladysiewicz, M., Misiewicz, J., Korpijärvi, V.-M., Pakarinen, J., Puustinen, J., Laukkanen, P., Laakso, A., Guina, M., Dumitrescu, M., Pessa, M. (2010) Contactless electroreflectance study of band bending in Be-doped GaInNAs/GaAs quantum wells: The origin of photoluminescence enhancement. Applied Physics Letters, 97 (2). 21902pp. doi:10.1063/1.3462299
Pham, H. T., Yoon, S. F., Tan, K. H., Boning, D. (2007) Effects of nitrogen incorporation in InSb1−xNx grown using radio frequency plasma-assisted molecular beam epitaxy. Applied Physics Letters, 90 (9). 92115pp. doi:10.1063/1.2710751
Müllhäuser, J. R., Jenichen, B., Wassermeier, M., Brandt, O., Ploog, K. H. (1997) Characterization of zinc blende InxGa1−xN grown by radio frequency plasma assisted molecular beam epitaxy on GaAs (001). Applied Physics Letters, 71 (7). 909-911 doi:10.1063/1.119685
Müllhäuser, J. R., Brandt, O., Trampert, A., Jenichen, B., Ploog, K. H. (1998) Green photoluminescence from cubic In0.4Ga0.6N grown by radio frequency plasma-assisted molecular beam epitaxy. Applied Physics Letters, 73 (9). 1230-1232 doi:10.1063/1.122136
Miguel-Sánchez, J., Guzmán, A., Jahn, U., Trampert, A., Ulloa, J. M., Muñoz, E., Hierro, A. (2007) Role of ionized nitrogen species in the optical and structural properties of GaInNAs/GaAs quantum wells grown by plasma-assisted molecular beam epitaxy. Journal of Applied Physics, 101 (10). 103526pp. doi:10.1063/1.2733740
 
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