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Wallace, M. J., Edwards, P. R., Kappers, M. J., Hopkins, M. A., Oehler, F., Sivaraya, S., Allsopp, D. W. E., Oliver, R. A., Humphreys, C. J., Martin, R. W. (2014) Bias dependence and correlation of the cathodoluminescence and electron beam induced current from an InGaN/GaN light emitting diode. Journal of Applied Physics, 116 (3). 33105pp. doi:10.1063/1.4890497

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Reference TypeJournal (article/letter/editorial)
TitleBias dependence and correlation of the cathodoluminescence and electron beam induced current from an InGaN/GaN light emitting diode
JournalJournal of Applied Physics
AuthorsWallace, M. J.Author
Edwards, P. R.Author
Kappers, M. J.Author
Hopkins, M. A.Author
Oehler, F.Author
Sivaraya, S.Author
Allsopp, D. W. E.Author
Oliver, R. A.Author
Humphreys, C. J.Author
Martin, R. W.Author
Year2014 (July 21)Volume116
Issue3
PublisherAIP Publishing
DOIdoi:10.1063/1.4890497Search in ResearchGate
Generate Citation Formats
Mindat Ref. ID5199882Long-form Identifiermindat:1:5:5199882:6
GUID0
Full ReferenceWallace, M. J., Edwards, P. R., Kappers, M. J., Hopkins, M. A., Oehler, F., Sivaraya, S., Allsopp, D. W. E., Oliver, R. A., Humphreys, C. J., Martin, R. W. (2014) Bias dependence and correlation of the cathodoluminescence and electron beam induced current from an InGaN/GaN light emitting diode. Journal of Applied Physics, 116 (3). 33105pp. doi:10.1063/1.4890497
Plain TextWallace, M. J., Edwards, P. R., Kappers, M. J., Hopkins, M. A., Oehler, F., Sivaraya, S., Allsopp, D. W. E., Oliver, R. A., Humphreys, C. J., Martin, R. W. (2014) Bias dependence and correlation of the cathodoluminescence and electron beam induced current from an InGaN/GaN light emitting diode. Journal of Applied Physics, 116 (3). 33105pp. doi:10.1063/1.4890497
In(2014, July) Journal of Applied Physics Vol. 116 (3) AIP Publishing

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Wallace, M. J., Edwards, P. R., Kappers, M. J., Hopkins, M. A., Oehler, F., Sivaraya, S., Oliver, R. A., Humphreys, C. J., Allsopp, D. W. E., Martin, R. W. (2015) Effect of the barrier growth mode on the luminescence and conductivity micron scale uniformity of InGaN light emitting diodes. Journal of Applied Physics, 117 (11). 115705pp. doi:10.1063/1.4915628
Massabuau, F. C.-P., Davies, M. J., Oehler, F., Pamenter, S. K., Thrush, E. J., Kappers, M. J., Kovács, A., Williams, T., Hopkins, M. A., Humphreys, C. J., Dawson, P., Dunin-Borkowski, R. E., Etheridge, J., Allsopp, D. W. E., Oliver, R. A. (2014) The impact of trench defects in InGaN/GaN light emitting diodes and implications for the “green gap” problem. Applied Physics Letters, 105 (11). 112110pp. doi:10.1063/1.4896279
Hopkins, M. A., Allsopp, D. W. E., Kappers, M. J., Oliver, R. A., Humphreys, C. J. (2017) The ABC model of recombination reinterpreted: Impact on understanding carrier transport and efficiency droop in InGaN/GaN light emitting diodes. Journal of Applied Physics, 122 (23). 234505pp. doi:10.1063/1.4986434
Oliver, R. A., Massabuau, F. C.-P., Kappers, M. J., Phillips, W. A., Thrush, E. J., Tartan, C. C., Blenkhorn, W. E., Badcock, T. J., Dawson, P., Hopkins, M. A., Allsopp, D. W. E., Humphreys, C. J. (2013) The impact of gross well width fluctuations on the efficiency of GaN-based light emitting diodes. Applied Physics Letters, 103 (14). 141114pp. doi:10.1063/1.4824193
Lewins, C. J., Le Boulbar, E. D., Lis, S. M., Edwards, P. R., Martin, R. W., Shields, P. A., Allsopp, D. W. E. (2014) Strong photonic crystal behavior in regular arrays of core-shell and quantum disc InGaN/GaN nanorod light-emitting diodes. Journal of Applied Physics, 116 (4). 44305pp. doi:10.1063/1.4891236
Badcock, T. J., Dawson, P., Davies, M. J., Kappers, M. J., Massabuau, F. C.-P., Oehler, F., Oliver, R. A., Humphreys, C. J. (2014) Low temperature carrier redistribution dynamics in InGaN/GaN quantum wells. Journal of Applied Physics, 115 (11). 113505pp. doi:10.1063/1.4868628
Kundys, D., Schulz, S., Oehler, F., Sutherland, D., Badcock, T. J., Dawson, P., Kappers, M. J., Oliver, R. A., Humphreys, C. J. (2014) Polarized photoluminescence excitation spectroscopy of a-plane InGaN/GaN multiple quantum wells grown on r-plane sapphire. Journal of Applied Physics, 115 (11). 113106pp. doi:10.1063/1.4868692
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Zhuang, Y. D., Bruckbauer, J., Shields, P. A., Edwards, P. R., Martin, R. W., Allsopp, D. W. E. (2014) Influence of stress on optical transitions in GaN nanorods containing a single InGaN/GaN quantum disk. Journal of Applied Physics, 116 (17). 174305pp. doi:10.1063/1.4898685
Bruckbauer, Jochen, Edwards, Paul R, Sahonta, Suman-Lata, Massabuau, Fabien C-P, Kappers, Menno J, Humphreys, Colin J, Oliver, Rachel A, Martin, Robert W (2014) Cathodoluminescence hyperspectral imaging of trench-like defects in InGaN/GaN quantum well structures. Journal of Physics D: Applied Physics, 47. 135107pp. doi:10.1088/0022-3727/47/13/135107
 
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