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Attiaoui, Anis, Moutanabbir, Oussama (2014) Indirect-to-direct band gap transition in relaxed and strained Ge1−x−ySixSnyternary alloys. Journal of Applied Physics, 116 (6). 63712pp. doi:10.1063/1.4889926

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Reference TypeJournal (article/letter/editorial)
TitleIndirect-to-direct band gap transition in relaxed and strained Ge1−x−ySixSnyternary alloys
JournalJournal of Applied Physics
AuthorsAttiaoui, AnisAuthor
Moutanabbir, OussamaAuthor
Year2014 (August 14)Volume116
Issue6
PublisherAIP Publishing
DOIdoi:10.1063/1.4889926Search in ResearchGate
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Mindat Ref. ID5200130Long-form Identifiermindat:1:5:5200130:3
GUID0
Full ReferenceAttiaoui, Anis, Moutanabbir, Oussama (2014) Indirect-to-direct band gap transition in relaxed and strained Ge1−x−ySixSnyternary alloys. Journal of Applied Physics, 116 (6). 63712pp. doi:10.1063/1.4889926
Plain TextAttiaoui, Anis, Moutanabbir, Oussama (2014) Indirect-to-direct band gap transition in relaxed and strained Ge1−x−ySixSnyternary alloys. Journal of Applied Physics, 116 (6). 63712pp. doi:10.1063/1.4889926
In(2014, August) Journal of Applied Physics Vol. 116 (6) AIP Publishing

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Assali, S., Dijkstra, A., Attiaoui, A., Bouthillier, É., Haverkort, J.E.M., Moutanabbir, O. (2021) Midinfrared Emission and Absorption in Strained and Relaxed Direct-Band-Gap Ge1−xSnx Semiconductors. Physical Review Applied, 15 (2) doi:10.1103/physrevapplied.15.024031
Daligou, Gérard, Attiaoui, Anis, Assali, Simone, Del Vecchio, Patrick, Moutanabbir, Oussama (2023) Radiative carrier lifetime in Ge1−xSnx midinfrared emitters. Physical Review Applied, 20 (6) doi:10.1103/physrevapplied.20.064001
Gallagher, J. D., Xu, Chi, Jiang, Liying, Kouvetakis, John, Menéndez, José (2013) Fundamental band gap and direct-indirect crossover in Ge1-x-ySixSny alloys. Applied Physics Letters, 103 (20). 202104pp. doi:10.1063/1.4829621
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Yang, Guang, Ma, Tianxing, Peng, Xihong (2018) Superior mechanical flexibility and strained-engineered direct-indirect band gap transition of green phosphorene. Applied Physics Letters, 112 (24). 241904pp. doi:10.1063/1.5030389
Mukherjee, Samik, Attiaoui, Anis, Bauer, Matthias, Moutanabbir, Oussama (2020) 3D Atomic Mapping of Interfacial Roughness and Its Spatial Correlation Length in Sub-10 nm Superlattices. ACS Applied Materials & Interfaces, 12. 1728-1736 doi:10.1021/acsami.9b13802
Lan, H-S, Liu, C W (2017) Band alignments at strained Ge1−x Sn x /relaxed Ge1−y Sn y heterointerfaces. Journal of Physics D: Applied Physics, 50. 13pp. doi:10.1088/1361-6463/aa5f1c
Attiaoui, Anis, Daligou, Gérard, Assali, Simone, Skibitzki, Oliver, Schroeder, Thomas, Moutanabbir, Oussama (2023) Polarization‐Tuned Fano Resonances in All‐Dielectric Short‐Wave Infrared Metasurface. Advanced Materials, 35 (28) Wiley. doi:10.1002/adma.202300595
Assali, Simone, Attiaoui, Anis, Vecchio, Patrick Del, Mukherjee, Samik, Nicolas, Jérôme, Moutanabbir, Oussama (2022) A Light‐Hole Germanium Quantum Well on Silicon. Advanced Materials, 34 (27) 2201192 doi:10.1002/adma.202201192
Groell, Léonor, Attiaoui, Anis, Assali, Simone, Moutanabbir, Oussama (2021) Combined Iodine- and Sulfur-Based Treatments for an Effective Passivation of GeSn Surface. The Journal of Physical Chemistry C, 125 (17) 9516-9525 doi:10.1021/acs.jpcc.1c01902
Gallagher, J. D., Senaratne, C. L., Kouvetakis, J., Menéndez, J. (2014) Compositional dependence of the bowing parameter for the direct and indirect band gaps in Ge1−ySny alloys. Applied Physics Letters, 105 (14). 142102pp. doi:10.1063/1.4897272
 
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