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Varley, J. B., Lordi, V. (2014) Intermixing at the absorber-buffer layer interface in thin-film solar cells: The electronic effects of point defects in Cu(In,Ga)(Se,S)2 and Cu2ZnSn(Se,S)4 devices. Journal of Applied Physics, 116 (6). 63505pp. doi:10.1063/1.4892407

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Reference TypeJournal (article/letter/editorial)
TitleIntermixing at the absorber-buffer layer interface in thin-film solar cells: The electronic effects of point defects in Cu(In,Ga)(Se,S)2 and Cu2ZnSn(Se,S)4 devices
JournalJournal of Applied Physics
AuthorsVarley, J. B.Author
Lordi, V.Author
Year2014 (August 14)Volume116
Issue6
PublisherAIP Publishing
DOIdoi:10.1063/1.4892407Search in ResearchGate
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Mindat Ref. ID5200166Long-form Identifiermindat:1:5:5200166:8
GUID0
Full ReferenceVarley, J. B., Lordi, V. (2014) Intermixing at the absorber-buffer layer interface in thin-film solar cells: The electronic effects of point defects in Cu(In,Ga)(Se,S)2 and Cu2ZnSn(Se,S)4 devices. Journal of Applied Physics, 116 (6). 63505pp. doi:10.1063/1.4892407
Plain TextVarley, J. B., Lordi, V. (2014) Intermixing at the absorber-buffer layer interface in thin-film solar cells: The electronic effects of point defects in Cu(In,Ga)(Se,S)2 and Cu2ZnSn(Se,S)4 devices. Journal of Applied Physics, 116 (6). 63505pp. doi:10.1063/1.4892407
In(2014, August) Journal of Applied Physics Vol. 116 (6) AIP Publishing

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Varley, J. B., Lordi, V., He, X., Rockett, A. (2016) First principles calculations of point defect diffusion in CdS buffer layers: Implications for Cu(In,Ga)(Se,S)2 and Cu2ZnSn(Se,S)4-based thin-film photovoltaics. Journal of Applied Physics, 119 (2). 25703pp. doi:10.1063/1.4939656
Mueller, B. J., Zimmermann, C., Haug, V., Hergert, F., Koehler, T., Zweigart, S., Herr, U. (2014) Influence of different sulfur to selenium ratios on the structural and electronic properties of Cu(In,Ga)(S,Se)2 thin films and solar cells formed by the stacked elemental layer process. Journal of Applied Physics, 116 (17). 174503pp. doi:10.1063/1.4900991
Weinhardt, L., Heske, C., Umbach, E., Niesen, T. P., Visbeck, S., Karg, F. (2004) Band alignment at the i-ZnO/CdS interface in Cu(In,Ga)(S,Se)2 thin-film solar cells. Applied Physics Letters, 84 (16). 3175-3177 doi:10.1063/1.1704877
Shigemi, Akio, Wada, Takahiro (2018) First-principles studies on the interface between light-absorbing layer and Mo back electrode in Cu(In,Ga)Se2, Cu2ZnSn(S,Se)4, and Cu2SnS3 solar cells. Japanese Journal of Applied Physics, 57 (8) 8 doi:10.7567/jjap.57.08rc17
Guglietta, Glenn W., Choudhury, Kaushik Roy, Caspar, Jonathan V., Baxter, Jason B. (2014) Employing time-resolved terahertz spectroscopy to analyze carrier dynamics in thin-film Cu2ZnSn(S,Se)4 absorber layers. Applied Physics Letters, 104 (25). 253901pp. doi:10.1063/1.4884817
Turcu, M., Pakma, O., Rau, U. (2002) Interdependence of absorber composition and recombination mechanism in Cu(In,Ga)(Se,S)2 heterojunction solar cells. Applied Physics Letters, 80 (14). 2598-2600 doi:10.1063/1.1467621
Rau, Uwe, Taretto, Kurt, Siebentritt, Susanne (2009) Grain boundaries in Cu(In, Ga)(Se, S)2 thin-film solar cells. Applied Physics A, 96. 221-234 doi:10.1007/s00339-008-4978-0
Varley, J. B., Lordi, V. (2013) Electrical properties of point defects in CdS and ZnS. Applied Physics Letters, 103 (10). 102103pp. doi:10.1063/1.4819492
Campbell, Stephen, Qu, Yongtao, Gibbon, James, Edwards, Holly J., Dhanak, Vin R., Tiwari, Devendra, Barrioz, Vincent, Beattie, Neil S., Zoppi, Guillaume (2020) Defect limitations in Cu2ZnSn(S, Se)4 solar cells utilizing an In2S3 buffer layer. Journal of Applied Physics, 127 (20) 205305pp. doi:10.1063/5.0002372
Namnuan, B., Amornkitbamrung, V., Chatraphorn, S. (2019) Effects of Cu(In,Ga)3Se5 defect phase layer in Cu(In,Ga)Se2 thin film solar cells. Journal of Alloys and Compounds, 800. 305-313 doi:10.1016/j.jallcom.2019.06.068
Hönes, C., Hackenberg, J., Zweigart, S., Wachau, A., Hergert, F., Siebentritt, S. (2015) A comparative study of the annealing behavior of Cu(In,Ga)(S,Se)2 based solar cells with an indium sulfide buffer layer, partly submitted to wet chemical treatments. Journal of Applied Physics, 117 (9). 94503pp. doi:10.1063/1.4914080
 
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