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Greenlee, Jordan D., Feigelson, Boris N., Anderson, Travis J., Tadjer, Marko J., Hite, Jennifer K., Mastro, Michael A., Eddy, Charles R., Hobart, Karl D., Kub, Francis J. (2014) Multicycle rapid thermal annealing optimization of Mg-implanted GaN: Evolution of surface, optical, and structural properties. Journal of Applied Physics, 116 (6). 63502pp. doi:10.1063/1.4892618

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Reference TypeJournal (article/letter/editorial)
TitleMulticycle rapid thermal annealing optimization of Mg-implanted GaN: Evolution of surface, optical, and structural properties
JournalJournal of Applied Physics
AuthorsGreenlee, Jordan D.Author
Feigelson, Boris N.Author
Anderson, Travis J.Author
Tadjer, Marko J.Author
Hite, Jennifer K.Author
Mastro, Michael A.Author
Eddy, Charles R.Author
Hobart, Karl D.Author
Kub, Francis J.Author
Year2014 (August 14)Volume116
Issue6
PublisherAIP Publishing
DOIdoi:10.1063/1.4892618Search in ResearchGate
Generate Citation Formats
Mindat Ref. ID5200177Long-form Identifiermindat:1:5:5200177:4
GUID0
Full ReferenceGreenlee, Jordan D., Feigelson, Boris N., Anderson, Travis J., Tadjer, Marko J., Hite, Jennifer K., Mastro, Michael A., Eddy, Charles R., Hobart, Karl D., Kub, Francis J. (2014) Multicycle rapid thermal annealing optimization of Mg-implanted GaN: Evolution of surface, optical, and structural properties. Journal of Applied Physics, 116 (6). 63502pp. doi:10.1063/1.4892618
Plain TextGreenlee, Jordan D., Feigelson, Boris N., Anderson, Travis J., Tadjer, Marko J., Hite, Jennifer K., Mastro, Michael A., Eddy, Charles R., Hobart, Karl D., Kub, Francis J. (2014) Multicycle rapid thermal annealing optimization of Mg-implanted GaN: Evolution of surface, optical, and structural properties. Journal of Applied Physics, 116 (6). 63502pp. doi:10.1063/1.4892618
In(2014, August) Journal of Applied Physics Vol. 116 (6) AIP Publishing

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Greenlee, Jordan D., Anderson, Travis J., Feigelson, Boris N., Hobart, Karl D., Kub, Francis J. (2015) Characterization of an Mg-implanted GaN p-i-n diode. physica status solidi (a), 212 (12). 2772-2775 doi:10.1002/pssa.201532506
Tadjer, Marko J., Hobart, Karl D., Mastro, Michael A., Anderson, Travis J., Imhoff, Eugene A., Kub, Fritz J., Hite, Jennifer K., Eddy, Charles R. (2010) Effect of Temperature and Al Concentration on the Electrical Performance of GaN and Al0.2Ga0.8N Accumulation-Mode FET Devices. Materials Science Forum, 645. 1215-1218 doi:10.4028/www.scientific.net/msf.645-648.1215
Jacobs, Alan G., Feigelson, Boris N., Spencer, Joseph A., Tadjer, Marko J., Hite, Jennifer K., Hobart, Karl D., Anderson, Travis J. (2023) Efficient Activation and High Mobility of Ion-Implanted Silicon for Next-Generation GaN Devices. Crystals, 13 (5) 736 doi:10.3390/cryst13050736
Mastro, Michael A., Anderson, Travis J., Tadjer, Marko J., Kub, Francis J., Hite, Jennifer K., Kim, Jihyun, Eddy, Charles R. (2014) III-nitride nanowire based light emitting diodes on carbon paper. physica status solidi (c), 11 (3). 442-445 doi:10.1002/pssc.201300537
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Jacobs, Alan G., Feigelson, Boris N., Hite, Jennifer K., Gorsak, Cameron A., Luna, Lunet E., Anderson, Travis J., Kub, Francis J. (2019) Polarity dependent implanted p-type dopant activation in GaN. Japanese Journal of Applied Physics, 58. doi:10.7567/1347-4065/ab1129
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Feigelson, B.N., Anderson, T.J., Abraham, M., Freitas, J.A., Hite, J.K., Eddy, C.R., Kub, F.J. (2012) Multicycle rapid thermal annealing technique and its application for the electrical activation of Mg implanted in GaN. Journal of Crystal Growth, 350 (1). 21-26 doi:10.1016/j.jcrysgro.2011.12.016
 
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