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Thu Trang Nghiêm, T., Saint-Martin, J., Dollfus, P. (2014) New insights into self-heating in double-gate transistors by solving Boltzmann transport equations. Journal of Applied Physics, 116 (7). 74514pp. doi:10.1063/1.4893646

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Reference TypeJournal (article/letter/editorial)
TitleNew insights into self-heating in double-gate transistors by solving Boltzmann transport equations
JournalJournal of Applied Physics
AuthorsThu Trang Nghiêm, T.Author
Saint-Martin, J.Author
Dollfus, P.Author
Year2014 (August 21)Volume116
Issue7
PublisherAIP Publishing
DOIdoi:10.1063/1.4893646Search in ResearchGate
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Mindat Ref. ID5200298Long-form Identifiermindat:1:5:5200298:6
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Full ReferenceThu Trang Nghiêm, T., Saint-Martin, J., Dollfus, P. (2014) New insights into self-heating in double-gate transistors by solving Boltzmann transport equations. Journal of Applied Physics, 116 (7). 74514pp. doi:10.1063/1.4893646
Plain TextThu Trang Nghiêm, T., Saint-Martin, J., Dollfus, P. (2014) New insights into self-heating in double-gate transistors by solving Boltzmann transport equations. Journal of Applied Physics, 116 (7). 74514pp. doi:10.1063/1.4893646
In(2014, August) Journal of Applied Physics Vol. 116 (7) AIP Publishing

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Do, V. Nam, Dollfus, P. (2007) Oscillation of gate leakage current in double-gate metal-oxide-semiconductor field-effect transistors. Journal of Applied Physics, 101 (7). 73709pp. doi:10.1063/1.2716874
NGHIÊM, T. T. TRANG, AUBRY-FORTUNA, V., CHASSAT, C., BOSSEBOEUF, A., DOLLFUS, P. (2011) MONTE CARLO SIMULATION OF GIANT PIEZORESISTANCE EFFECT IN p-TYPE SILICON NANOSTRUCTURES. Modern Physics Letters B, 25. 995-1001 doi:10.1142/s0217984911026711
Hung Nguyen, V., Nguyen, M. Chung, Nguyen, Huy-Viet, Saint-Martin, J., Dollfus, P. (2014) Enhanced thermoelectric figure of merit in vertical graphene junctions. Applied Physics Letters, 105 (13). 133105pp. doi:10.1063/1.4896915
Bigelow, Jeffrey M., Leburton, J.‐P. (1994) Self‐consistent simulation of quantum transport in dual‐gate field‐effect transistors. Journal of Applied Physics, 76 (5). 2887-2892 doi:10.1063/1.357526
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Cassan, E., Galdin, S., Dollfus, P., Hesto, P. (1999) Study of direct tunneling through ultrathin gate oxide of field effect transistors using Monte Carlo simulation. Journal of Applied Physics, 86 (7). 3804-3811 doi:10.1063/1.371291
Cavassilas, Nicolas, Michelini, Fabienne, Bescond, Marc (2011) Multiband quantum transport simulations of ultimate p-type double-gate transistors: Effects of hole-phonon scattering. Journal of Applied Physics, 109 (7). 73706pp. doi:10.1063/1.3556457
Trang Nghiêm, T. T., Chapuis, Pierre-Olivier (2016) Phononic thermal resistance due to a finite periodic array of nano-scatterers. Journal of Applied Physics, 120 (4). 44305pp. doi:10.1063/1.4959803
Mazzamuto, F., Saint-Martin, J., Valentin, A., Chassat, C., Dollfus, P. (2011) Edge shape effect on vibrational modes in graphene nanoribbons: A numerical study. Journal of Applied Physics, 109 (6). 64516pp. doi:10.1063/1.3552293
Hung Nguyen, V., Mazzamuto, F., Saint-Martin, J., Bournel, A., Dollfus, P. (2011) Giant effect of negative differential conductance in graphene nanoribbon p-n hetero-junctions. Applied Physics Letters, 99 (4). 42105pp. doi:10.1063/1.3616143
Dollfus, P., Bru, C., Hesto, P. (1993) Monte Carlo simulation of pseudomorphic InGaAs/GaAs high electron mobility transistors: Physical limitations at ultrashort gate length. Journal of Applied Physics, 73 (2). 804-812 doi:10.1063/1.353341
 
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