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Wang, Ying, Yang, Lin'an, Wang, Zhizhe, Chen, Qing, Huang, Yonghong, Dai, Yang, Chen, Haoran, Zhao, Hongliang, Hao, Yue (2014) Ultra-short channel GaN high electron mobility transistor-like Gunn diode with composite contact. Journal of Applied Physics, 116 (9). 94502pp. doi:10.1063/1.4894627

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Reference TypeJournal (article/letter/editorial)
TitleUltra-short channel GaN high electron mobility transistor-like Gunn diode with composite contact
JournalJournal of Applied Physics
AuthorsWang, YingAuthor
Yang, Lin'anAuthor
Wang, ZhizheAuthor
Chen, QingAuthor
Huang, YonghongAuthor
Dai, YangAuthor
Chen, HaoranAuthor
Zhao, HongliangAuthor
Hao, YueAuthor
Year2014 (September 7)Volume116
Issue9
PublisherAIP Publishing
DOIdoi:10.1063/1.4894627Search in ResearchGate
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Mindat Ref. ID5200442Long-form Identifiermindat:1:5:5200442:5
GUID0
Full ReferenceWang, Ying, Yang, Lin'an, Wang, Zhizhe, Chen, Qing, Huang, Yonghong, Dai, Yang, Chen, Haoran, Zhao, Hongliang, Hao, Yue (2014) Ultra-short channel GaN high electron mobility transistor-like Gunn diode with composite contact. Journal of Applied Physics, 116 (9). 94502pp. doi:10.1063/1.4894627
Plain TextWang, Ying, Yang, Lin'an, Wang, Zhizhe, Chen, Qing, Huang, Yonghong, Dai, Yang, Chen, Haoran, Zhao, Hongliang, Hao, Yue (2014) Ultra-short channel GaN high electron mobility transistor-like Gunn diode with composite contact. Journal of Applied Physics, 116 (9). 94502pp. doi:10.1063/1.4894627
In(2014, September) Journal of Applied Physics Vol. 116 (9) AIP Publishing

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