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Ning, Feng, Wang, Dan, Tang, Li-Ming, Zhang, Yong, Chen, Ke-Qiu (2014) The effects of the chemical composition and strain on the electronic properties of GaSb/InAs core-shell nanowires. Journal of Applied Physics, 116 (9). 94308pp. doi:10.1063/1.4894707

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Reference TypeJournal (article/letter/editorial)
TitleThe effects of the chemical composition and strain on the electronic properties of GaSb/InAs core-shell nanowires
JournalJournal of Applied Physics
AuthorsNing, FengAuthor
Wang, DanAuthor
Tang, Li-MingAuthor
Zhang, YongAuthor
Chen, Ke-QiuAuthor
Year2014 (September 7)Volume116
Issue9
PublisherAIP Publishing
DOIdoi:10.1063/1.4894707Search in ResearchGate
Generate Citation Formats
Mindat Ref. ID5200445Long-form Identifiermindat:1:5:5200445:2
GUID0
Full ReferenceNing, Feng, Wang, Dan, Tang, Li-Ming, Zhang, Yong, Chen, Ke-Qiu (2014) The effects of the chemical composition and strain on the electronic properties of GaSb/InAs core-shell nanowires. Journal of Applied Physics, 116 (9). 94308pp. doi:10.1063/1.4894707
Plain TextNing, Feng, Wang, Dan, Tang, Li-Ming, Zhang, Yong, Chen, Ke-Qiu (2014) The effects of the chemical composition and strain on the electronic properties of GaSb/InAs core-shell nanowires. Journal of Applied Physics, 116 (9). 94308pp. doi:10.1063/1.4894707
In(2014, September) Journal of Applied Physics Vol. 116 (9) AIP Publishing

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Ning, Feng, Tang, Li-Ming, Zhang, Yong, Chen, Ke-Qiu (2015) Remote p-type Doping in GaSb/InAs Core-shell Nanowires. Scientific Reports, 5. doi:10.1038/srep10813
Ning, Feng, Tang, Li-Ming, Zhang, Yong, Chen, Ke-Qiu (2013) First-principles study of quantum confinement and surface effects on the electronic properties of InAs nanowires. Journal of Applied Physics, 114 (22). 224304pp. doi:10.1063/1.4842735
Zhang, Yong, Tang, Li-Ming, Ning, Feng, Wang, Dan, Chen, Ke-Qiu (2015) Structural stability and electronic properties of InSb nanowires: A first-principles study. Journal of Applied Physics, 117 (12). 125707pp. doi:10.1063/1.4916250
Zhang, Yong, Tang, Li-Ming, Ning, Feng, Wang, Dan, Chen, Ke-Qiu (2013) Reducing self-compensating Mn interstitials in (Ga, Mn)As via nanostructure engineering. Journal of Physics D: Applied Physics, 46. 175005pp. doi:10.1088/0022-3727/46/17/175005
Liao, Gaohua, Luo, Ning, Yang, Zhihu, Chen, Keqiu, Xu, H. Q. (2015) Electronic structures of [001]- and [111]-oriented InSb and GaSb free-standing nanowires. Journal of Applied Physics, 118 (9). 94308pp. doi:10.1063/1.4929412
Li, Qianze, Tang, Liangpo, Zhang, Caixin, Wang, Dan, Chen, Qin-Jun, Feng, Ye-Xin, Tang, Li-Ming, Chen, Ke-Qiu (2017) Seeking the Dirac cones in the MoS2/WSe2 van der Waals heterostructure. Applied Physics Letters, 111 (17). 171602pp. doi:10.1063/1.4998305
Tang, Liang-Po, Tang, Li-Ming, Wang, Dan, Deng, Hui-Xiong, Chen, Ke-Qiu (2018) Metal and ligand effects on the stability and electronic properties of crystalline two-dimensional metal-benzenehexathiolate coordination compounds. Journal of Physics: Condensed Matter, 30 (46). 465301pp. doi:10.1088/1361-648x/aae618
Liu, Nuo, Lu, Ning, Yao, Yong-Xin, Li, Yan-Rong, Wang, Cai-Zhuang, Ho, Kai-Ming (2011) Strain Effects in Ge/Si and Si/Ge Core/Shell Nanowires. The Journal of Physical Chemistry C, 115 (32). 15739-15742 doi:10.1021/jp110379n
Zeng, Yu-Jia, Feng, Ye-Xin, Tang, Li-Ming, Chen, Ke-Qiu (2021) Effect of out-of-plane strain on the phonon structures and anharmonicity of twisted multilayer graphene. Applied Physics Letters, 118 (18) 183103pp. doi:10.1063/5.0047539
Wang, Jianwei, Zhang, Yong (2014) Band-gap corrected density functional theory calculations for InAs/GaSb type II superlattices. Journal of Applied Physics, 116 (21). 214301pp. doi:10.1063/1.4903063
Chen, J. F., Cho, A. Y. (1992) The effects of GaSb/InAs broken gap on interband tunneling current of a GaSb/InAs/GaSb/AlSb/InAs tunneling structure. Journal of Applied Physics, 71 (9). 4432-4435 doi:10.1063/1.350783
 
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