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Chen, Hsiang, Chu, Yu-Cheng, Shei, Shih-Chang, Chen, Yun-Ti, Chen, Chian-You (2014) Electrical, optical, and material characterizations of blue InGaN light emitting diodes submitted to reverse-bias stress in water vapor condition. Journal of Applied Physics, 116 (9). 94505pp. doi:10.1063/1.4894831

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Reference TypeJournal (article/letter/editorial)
TitleElectrical, optical, and material characterizations of blue InGaN light emitting diodes submitted to reverse-bias stress in water vapor condition
JournalJournal of Applied Physics
AuthorsChen, HsiangAuthor
Chu, Yu-ChengAuthor
Shei, Shih-ChangAuthor
Chen, Yun-TiAuthor
Chen, Chian-YouAuthor
Year2014 (September 7)Volume116
Issue9
PublisherAIP Publishing
DOIdoi:10.1063/1.4894831Search in ResearchGate
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Mindat Ref. ID5200451Long-form Identifiermindat:1:5:5200451:3
GUID0
Full ReferenceChen, Hsiang, Chu, Yu-Cheng, Shei, Shih-Chang, Chen, Yun-Ti, Chen, Chian-You (2014) Electrical, optical, and material characterizations of blue InGaN light emitting diodes submitted to reverse-bias stress in water vapor condition. Journal of Applied Physics, 116 (9). 94505pp. doi:10.1063/1.4894831
Plain TextChen, Hsiang, Chu, Yu-Cheng, Shei, Shih-Chang, Chen, Yun-Ti, Chen, Chian-You (2014) Electrical, optical, and material characterizations of blue InGaN light emitting diodes submitted to reverse-bias stress in water vapor condition. Journal of Applied Physics, 116 (9). 94505pp. doi:10.1063/1.4894831
In(2014, September) Journal of Applied Physics Vol. 116 (9) AIP Publishing

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