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Li, L. B., Chen, Z. M., Zang, Y. (2015) Interface-structure of the Si/SiC heterojunction grown on 6H-SiC. Journal of Applied Physics, 117 (1). 13104pp. doi:10.1063/1.4901644

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Reference TypeJournal (article/letter/editorial)
TitleInterface-structure of the Si/SiC heterojunction grown on 6H-SiC
JournalJournal of Applied Physics
AuthorsLi, L. B.Author
Chen, Z. M.Author
Zang, Y.Author
Year2015 (January 7)Volume117
Issue1
PublisherAIP Publishing
DOIdoi:10.1063/1.4901644Search in ResearchGate
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Mindat Ref. ID5200459Long-form Identifiermindat:1:5:5200459:5
GUID0
Full ReferenceLi, L. B., Chen, Z. M., Zang, Y. (2015) Interface-structure of the Si/SiC heterojunction grown on 6H-SiC. Journal of Applied Physics, 117 (1). 13104pp. doi:10.1063/1.4901644
Plain TextLi, L. B., Chen, Z. M., Zang, Y. (2015) Interface-structure of the Si/SiC heterojunction grown on 6H-SiC. Journal of Applied Physics, 117 (1). 13104pp. doi:10.1063/1.4901644
In(2015, January) Journal of Applied Physics Vol. 117 (1) AIP Publishing

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Chen, H., Wang, G., Dudley, M., Zhang, L., Wu, L., Zhu, Y., Xu, Z., Edgar, J. H., Kuball, M. (2008) Defect structures in B12As2 epitaxial layers grown on (0001) 6H-SiC. Journal of Applied Physics, 103 (12). 123508pp. doi:10.1063/1.2940132
Guziewicz, M, Kaminska, E, Piotrowska, A, Golaszewska, K, Domagala, J Z, Poisson, M-A, Lahreche, H, Langer, R, Bove, P (2008) Comparative study on stress in AlGaN/GaN HEMT structures grown on 6H-SiC, Si and on composite substrates of the 6H-SiC/poly-SiC and Si/poly-SiC. Journal of Physics: Conference Series, 100. 42035pp. doi:10.1088/1742-6596/100/4/042035
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