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Yang, W. C., Wu, C. H., Tseng, Y. T., Chiu, S. Y., Cheng, K. Y. (2015) Growth mechanisms of plasma-assisted molecular beam epitaxy of green emission InGaN/GaN single quantum wells at high growth temperatures. Journal of Applied Physics, 117 (1). 15306pp. doi:10.1063/1.4905419

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Reference TypeJournal (article/letter/editorial)
TitleGrowth mechanisms of plasma-assisted molecular beam epitaxy of green emission InGaN/GaN single quantum wells at high growth temperatures
JournalJournal of Applied Physics
AuthorsYang, W. C.Author
Wu, C. H.Author
Tseng, Y. T.Author
Chiu, S. Y.Author
Cheng, K. Y.Author
Year2015 (January 7)Volume117
Issue1
PublisherAIP Publishing
DOIdoi:10.1063/1.4905419Search in ResearchGate
Generate Citation Formats
Mindat Ref. ID5200511Long-form Identifiermindat:1:5:5200511:4
GUID0
Full ReferenceYang, W. C., Wu, C. H., Tseng, Y. T., Chiu, S. Y., Cheng, K. Y. (2015) Growth mechanisms of plasma-assisted molecular beam epitaxy of green emission InGaN/GaN single quantum wells at high growth temperatures. Journal of Applied Physics, 117 (1). 15306pp. doi:10.1063/1.4905419
Plain TextYang, W. C., Wu, C. H., Tseng, Y. T., Chiu, S. Y., Cheng, K. Y. (2015) Growth mechanisms of plasma-assisted molecular beam epitaxy of green emission InGaN/GaN single quantum wells at high growth temperatures. Journal of Applied Physics, 117 (1). 15306pp. doi:10.1063/1.4905419
In(2015, January) Journal of Applied Physics Vol. 117 (1) AIP Publishing

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