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Goux, L., Kim, J. Y., Magyari-Kope, B., Nishi, Y., Redolfi, A., Jurczak, M. (2015) H-treatment impact on conductive-filament formation and stability in Ta2O5-based resistive-switching memory cells. Journal of Applied Physics, 117 (12). 124501pp. doi:10.1063/1.4915946

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Reference TypeJournal (article/letter/editorial)
TitleH-treatment impact on conductive-filament formation and stability in Ta2O5-based resistive-switching memory cells
JournalJournal of Applied Physics
AuthorsGoux, L.Author
Kim, J. Y.Author
Magyari-Kope, B.Author
Nishi, Y.Author
Redolfi, A.Author
Jurczak, M.Author
Year2015 (March 28)Volume117
Issue12
PublisherAIP Publishing
DOIdoi:10.1063/1.4915946Search in ResearchGate
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Mindat Ref. ID5200706Long-form Identifiermindat:1:5:5200706:0
GUID0
Full ReferenceGoux, L., Kim, J. Y., Magyari-Kope, B., Nishi, Y., Redolfi, A., Jurczak, M. (2015) H-treatment impact on conductive-filament formation and stability in Ta2O5-based resistive-switching memory cells. Journal of Applied Physics, 117 (12). 124501pp. doi:10.1063/1.4915946
Plain TextGoux, L., Kim, J. Y., Magyari-Kope, B., Nishi, Y., Redolfi, A., Jurczak, M. (2015) H-treatment impact on conductive-filament formation and stability in Ta2O5-based resistive-switching memory cells. Journal of Applied Physics, 117 (12). 124501pp. doi:10.1063/1.4915946
In(2015, March) Journal of Applied Physics Vol. 117 (12) AIP Publishing

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