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Lomenzo, Patrick D., Takmeel, Qanit, Zhou, Chuanzhen, Fancher, Chris M., Lambers, Eric, Rudawski, Nicholas G., Jones, Jacob L., Moghaddam, Saeed, Nishida, Toshikazu (2015) TaN interface properties and electric field cycling effects on ferroelectric Si-doped HfO2 thin films. Journal of Applied Physics, 117 (13). 134105pp. doi:10.1063/1.4916715

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Reference TypeJournal (article/letter/editorial)
TitleTaN interface properties and electric field cycling effects on ferroelectric Si-doped HfO2 thin films
JournalJournal of Applied Physics
AuthorsLomenzo, Patrick D.Author
Takmeel, QanitAuthor
Zhou, ChuanzhenAuthor
Fancher, Chris M.Author
Lambers, EricAuthor
Rudawski, Nicholas G.Author
Jones, Jacob L.Author
Moghaddam, SaeedAuthor
Nishida, ToshikazuAuthor
Year2015 (April 7)Volume117
Issue13
PublisherAIP Publishing
DOIdoi:10.1063/1.4916715Search in ResearchGate
Generate Citation Formats
Mindat Ref. ID5200779Long-form Identifiermindat:1:5:5200779:6
GUID0
Full ReferenceLomenzo, Patrick D., Takmeel, Qanit, Zhou, Chuanzhen, Fancher, Chris M., Lambers, Eric, Rudawski, Nicholas G., Jones, Jacob L., Moghaddam, Saeed, Nishida, Toshikazu (2015) TaN interface properties and electric field cycling effects on ferroelectric Si-doped HfO2 thin films. Journal of Applied Physics, 117 (13). 134105pp. doi:10.1063/1.4916715
Plain TextLomenzo, Patrick D., Takmeel, Qanit, Zhou, Chuanzhen, Fancher, Chris M., Lambers, Eric, Rudawski, Nicholas G., Jones, Jacob L., Moghaddam, Saeed, Nishida, Toshikazu (2015) TaN interface properties and electric field cycling effects on ferroelectric Si-doped HfO2 thin films. Journal of Applied Physics, 117 (13). 134105pp. doi:10.1063/1.4916715
In(2015, April) Journal of Applied Physics Vol. 117 (13) AIP Publishing

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Lomenzo, Patrick D., Takmeel, Qanit, Zhou, Chuanzhen, Chung, Ching-Chang, Moghaddam, Saeed, Jones, Jacob L., Nishida, Toshikazu (2015) Mixed Al and Si doping in ferroelectric HfO2 thin films. Applied Physics Letters, 107 (24). 242903pp. doi:10.1063/1.4937588
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