Atalla, Mahmoud R. M., Jiang, Zhenyu, Liu, Jie, Wang, Li, Ashok, S., Xu, Jian (2015) Modeling the spectral responsivity of ultraviolet GaN Schottky barrier photodetectors under reverse bias. Journal of Applied Physics, 117 (13). 134503pp. doi:10.1063/1.4916782

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Reference Type	Journal (article/letter/editorial)
Title	Modeling the spectral responsivity of ultraviolet GaN Schottky barrier photodetectors under reverse bias
Journal	Journal of Applied Physics
Authors	Atalla, Mahmoud R. M.		Author
	Jiang, Zhenyu		Author
	Liu, Jie		Author
	Wang, Li		Author
	Ashok, S.		Author
	Xu, Jian		Author
Year	2015 (April 7)	Volume	117
Issue	13
Publisher	AIP Publishing
DOI	doi:10.1063/1.4916782Search in ResearchGate
	Generate Citation Formats
Mindat Ref. ID	5200796	Long-form Identifier	mindat:1:5:5200796:3
GUID	0
Full Reference	Atalla, Mahmoud R. M., Jiang, Zhenyu, Liu, Jie, Wang, Li, Ashok, S., Xu, Jian (2015) Modeling the spectral responsivity of ultraviolet GaN Schottky barrier photodetectors under reverse bias. Journal of Applied Physics, 117 (13). 134503pp. doi:10.1063/1.4916782
Plain Text	Atalla, Mahmoud R. M., Jiang, Zhenyu, Liu, Jie, Wang, Li, Ashok, S., Xu, Jian (2015) Modeling the spectral responsivity of ultraviolet GaN Schottky barrier photodetectors under reverse bias. Journal of Applied Physics, 117 (13). 134503pp. doi:10.1063/1.4916782
In	(2015, April) Journal of Applied Physics Vol. 117 (13) AIP Publishing

	Jiang, Zhenyu, Hu, Wenjia, Liu, Yan, Zhang, Wenjun, Mo, Chen, You, Guanjun, Wang, Li, Atalla, Mahmoud R. M., Zhang, Yu, Liu, Jie, Kurhade, Kandhar K., Xu, Jian (2015) Suppression of dark current through barrier engineer for solution-processed colloidal quantum-dots infrared photodetectors. Applied Physics Letters, 107 (9). 91115pp. doi:10.1063/1.4930158
	Jiang, Zhenyu, Hu, Wenjia, Mo, Chen, Liu, Yan, Zhang, Wenjun, You, Guanjun, Wang, Li, Atalla, Mahmoud R. M., Zhang, Yu, Liu, Jie, Kurhade, Kandhar K., Xu, Jian (2015) Ultra-sensitive tandem colloidal quantum-dot photodetectors. Nanoscale, 7. 16195-16199 doi:10.1039/c5nr03791c
	Zhao, D. G., Jiang, D. S., Zhu, J. J., Liu, Z. S., Zhang, S. M., Liang, J. W., Yang, Hui, Li, X., Li, X. Y., Gong, H. M. (2007) Influence of defects in n−-GaN layer on the responsivity of Schottky barrier ultraviolet photodetectors. Applied Physics Letters, 90 (6). 62106pp. doi:10.1063/1.2450658
	Jiang, Zhenyu, You, Guanjun, Wang, Li, Liu, Jie, Hu, Wenjia, Zhang, Yu, Xu, Jian (2014) Solution-processed high-performance colloidal quantum dot tandem photodetectors on flexible substrates. Journal of Applied Physics, 116 (8). 84303pp. doi:10.1063/1.4893897
	Dahal, R., Al Tahtamouni, T. M., Fan, Z. Y., Lin, J. Y., Jiang, H. X. (2007) Hybrid AlN–SiC deep ultraviolet Schottky barrier photodetectors. Applied Physics Letters, 90 (26). 263505pp. doi:10.1063/1.2752126
	Bouhdada, A., Hanzaz, M., Gibart, P., Omnès, F., Monroy, E., Muñoz, E. (2000) Modeling of the spectral response of AlxGa1−xN Schottky ultraviolet photodetectors. Journal of Applied Physics, 87 (12). 8286-8290 doi:10.1063/1.373539
	Tang, Xi, Qiu, Ran, Liu, Yuhan, Li, Baikui (2020) Thermally enhanced hole injection and breakdown in a Schottky-metal/p-GaN/AlGaN/GaN device under forward bias. Applied Physics Letters, 117 (4) 43501pp. doi:10.1063/5.0011831
	Solt, K., Melchior, H., Kroth, U., Kuschnerus, P., Persch, V., Rabus, H., Richter, M., Ulm, G. (1996) PtSi–n–Si Schottky‐barrier photodetectors with stable spectral responsivity in the 120–250 nm spectral range. Applied Physics Letters, 69 (24). 3662-3664 doi:10.1063/1.117016
	Sheu, J. K., Lee, M. L., Tun, C. J., Lin, S. W. (2006) Ultraviolet band-pass Schottky barrier photodetectors formed by Al-doped ZnO contacts to n-GaN. Applied Physics Letters, 88 (4). 43506pp. doi:10.1063/1.2167796
	Mo, Chen, Wang, Li, Galgano, Xavier, Zhang, Yu, Xu, Jian (2020) Fabrication of high-breakdown GaN Schottky barrier diodes over deeply-etched crystal surfaces. Journal of Applied Physics, 128 (11) 115703pp. doi:10.1063/1.5131462
	De-Gang, Zhao, Shuang, Zhang, Wen-Bao, Liu, Xiao-Peng, Hao, De-Sheng, Jiang, Jian-Jun, Zhu, Zong-Shun, Liu, Hui, Wang, Shu-Ming, Zhang, Hui, Yang, Long, Wei (2010) Role of Ga vacancies in enhancing the leakage current of GaN Schottky barrier ultraviolet photodetectors. Chinese Physics B, 19. 57802pp. doi:10.1088/1674-1056/19/5/057802

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Atalla, Mahmoud R. M., Jiang, Zhenyu, Liu, Jie, Wang, Li, Ashok, S., Xu, Jian (2015) Modeling the spectral responsivity of ultraviolet GaN Schottky barrier photodetectors under reverse bias. Journal of Applied Physics, 117 (13). 134503pp. doi:10.1063/1.4916782

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