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Wu, F., Gao, K. H., Li, Z. Q., Lin, T., Zhou, W. Z. (2015) Effects of GaN interlayer on the transport properties of lattice-matched AlInN/AlN/GaN heterostructures. Journal of Applied Physics, 117 (15). 155701pp. doi:10.1063/1.4918536

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Reference TypeJournal (article/letter/editorial)
TitleEffects of GaN interlayer on the transport properties of lattice-matched AlInN/AlN/GaN heterostructures
JournalJournal of Applied Physics
AuthorsWu, F.Author
Gao, K. H.Author
Li, Z. Q.Author
Lin, T.Author
Zhou, W. Z.Author
Year2015 (April 21)Volume117
Issue15
PublisherAIP Publishing
DOIdoi:10.1063/1.4918536Search in ResearchGate
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Mindat Ref. ID5200885Long-form Identifiermindat:1:5:5200885:6
GUID0
Full ReferenceWu, F., Gao, K. H., Li, Z. Q., Lin, T., Zhou, W. Z. (2015) Effects of GaN interlayer on the transport properties of lattice-matched AlInN/AlN/GaN heterostructures. Journal of Applied Physics, 117 (15). 155701pp. doi:10.1063/1.4918536
Plain TextWu, F., Gao, K. H., Li, Z. Q., Lin, T., Zhou, W. Z. (2015) Effects of GaN interlayer on the transport properties of lattice-matched AlInN/AlN/GaN heterostructures. Journal of Applied Physics, 117 (15). 155701pp. doi:10.1063/1.4918536
In(2015, April) Journal of Applied Physics Vol. 117 (15) AIP Publishing

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Tan, L. T., Martin, R. W., O’Donnell, K. P., Watson, I. M., Wu, Z. H., Ponce, F. A. (2008) Photoluminescence of near-lattice-matched GaN∕AlInN quantum wells grown on free-standing GaN and on sapphire substrates. Applied Physics Letters, 92 (3). 31907pp. doi:10.1063/1.2837630
Zhang, J.-Z., Dyson, A., Ridley, B. K. (2015) Hot electron energy relaxation in lattice-matched InAlN/AlN/GaN heterostructures: The sum rules for electron-phonon interactions and hot-phonon effect. Journal of Applied Physics, 117 (2). 25701pp. doi:10.1063/1.4905717
Zhang, S., Li, M. C., Feng, Z. H., Liu, B., Yin, J. Y., Zhao, L. C. (2009) High electron mobility and low sheet resistance in lattice-matched AlInN/AlN/GaN/AlN/GaN double-channel heterostructure. Applied Physics Letters, 95 (21). 212101pp. doi:10.1063/1.3264961
Song, J., Xu, F. J., Miao, Z. L., Wang, Y., Wang, X. Q., Shen, B. (2009) Influence of ultrathin AlN interlayer on the microstructure and the electrical transport properties of AlxGa1−xN/GaN heterostructures. Journal of Applied Physics, 106 (8). 83711pp. doi:10.1063/1.3246866
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Zhang, J.-Z., Dyson, A., Ridley, B. K. (2013) Rapid hot-electron energy relaxation in lattice-matched InAlN/AlN/GaN heterostructures. Applied Physics Letters, 102 (6). 62104pp. doi:10.1063/1.4792276
Rong, Taotao, Yang, Lin-An, Yang, Lin, Hao, Yue (2018) Theoretical investigation into negative differential resistance characteristics of resonant tunneling diodes based on lattice-matched and polarization-matched AlInN/GaN heterostructures. Journal of Applied Physics, 123 (4). 45702pp. doi:10.1063/1.5009397
Teke, A, Gökden, S, Tülek, R, Leach, J H, Fan, Q, Xie, J, Özgür, Ü, Morkoç, H, Lisesivdin, S B, Özbay, E (2009) The effect of AlN interlayer thicknesses on scattering processes in lattice-matched AlInN/GaN two-dimensional electron gas heterostructures. New Journal of Physics, 11. 63031pp. doi:10.1088/1367-2630/11/6/063031
Elhamri, S., Mitchel, W. C., Mitchell, W. D., Landis, G. R., Berney, R., Saxler, A. (2007) Study of the effects of an AlN interlayer on the transport properties of AlGaN∕AlN∕GaN heterostructures grown on SiC. Applied Physics Letters, 90 (4). 42112pp. doi:10.1063/1.2432300
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Yao, Z. Q., Zou, Y. S., Yang, Y., Zhang, W. J., Lee, S. T., Zhang, Y. Z., Ye, Z. Z. (2007) Epitaxial growth and structural analysis of AlN∕GaN heterostructures. Applied Physics Letters, 91 (22). 221912pp. doi:10.1063/1.2819616
 
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