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Wang, Xinshun, Liu, Yang, Zhao, Panjuan, Guo, Zhongyi, Li, Yan, Qu, Shiliang (2015) Valence state change and defect centers induced by infrared femtosecond laser in Yb:YAG crystals. Journal of Applied Physics, 117 (15). 153104pp. doi:10.1063/1.4918550

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Reference TypeJournal (article/letter/editorial)
TitleValence state change and defect centers induced by infrared femtosecond laser in Yb:YAG crystals
JournalJournal of Applied Physics
AuthorsWang, XinshunAuthor
Liu, YangAuthor
Zhao, PanjuanAuthor
Guo, ZhongyiAuthor
Li, YanAuthor
Qu, ShiliangAuthor
Year2015 (April 21)Volume117
Issue15
PublisherAIP Publishing
DOIdoi:10.1063/1.4918550Search in ResearchGate
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Mindat Ref. ID5200893Long-form Identifiermindat:1:5:5200893:5
GUID0
Full ReferenceWang, Xinshun, Liu, Yang, Zhao, Panjuan, Guo, Zhongyi, Li, Yan, Qu, Shiliang (2015) Valence state change and defect centers induced by infrared femtosecond laser in Yb:YAG crystals. Journal of Applied Physics, 117 (15). 153104pp. doi:10.1063/1.4918550
Plain TextWang, Xinshun, Liu, Yang, Zhao, Panjuan, Guo, Zhongyi, Li, Yan, Qu, Shiliang (2015) Valence state change and defect centers induced by infrared femtosecond laser in Yb:YAG crystals. Journal of Applied Physics, 117 (15). 153104pp. doi:10.1063/1.4918550
In(2015, April) Journal of Applied Physics Vol. 117 (15) AIP Publishing

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