Qian, Haolei, Wang, Yewu, Fang, Yanjun, Gu, Lin, Lu, Ren, Sha, Jian (2015) High-performance ZnO nanowire field-effect transistor with forming gas treated SiO2 gate dielectrics. Journal of Applied Physics, 117 (16). 164308pp. doi:10.1063/1.4919220
Reference Type | Journal (article/letter/editorial) | ||
---|---|---|---|
Title | High-performance ZnO nanowire field-effect transistor with forming gas treated SiO2 gate dielectrics | ||
Journal | Journal of Applied Physics | ||
Authors | Qian, Haolei | Author | |
Wang, Yewu | Author | ||
Fang, Yanjun | Author | ||
Gu, Lin | Author | ||
Lu, Ren | Author | ||
Sha, Jian | Author | ||
Year | 2015 (April 28) | Volume | 117 |
Issue | 16 | ||
Publisher | AIP Publishing | ||
DOI | doi:10.1063/1.4919220Search in ResearchGate | ||
Generate Citation Formats | |||
Mindat Ref. ID | 5200971 | Long-form Identifier | mindat:1:5:5200971:2 |
GUID | 0 | ||
Full Reference | Qian, Haolei, Wang, Yewu, Fang, Yanjun, Gu, Lin, Lu, Ren, Sha, Jian (2015) High-performance ZnO nanowire field-effect transistor with forming gas treated SiO2 gate dielectrics. Journal of Applied Physics, 117 (16). 164308pp. doi:10.1063/1.4919220 | ||
Plain Text | Qian, Haolei, Wang, Yewu, Fang, Yanjun, Gu, Lin, Lu, Ren, Sha, Jian (2015) High-performance ZnO nanowire field-effect transistor with forming gas treated SiO2 gate dielectrics. Journal of Applied Physics, 117 (16). 164308pp. doi:10.1063/1.4919220 | ||
In | (2015, April) Journal of Applied Physics Vol. 117 (16) AIP Publishing |
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