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Cheng, Zhe, Xu, Zaoli, Xu, Shen, Wang, Xinwei (2015) Temperature dependent behavior of thermal conductivity of sub-5 nm Ir film: Defect-electron scattering quantified by residual thermal resistivity. Journal of Applied Physics, 117 (2). 24307pp. doi:10.1063/1.4905607

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Reference TypeJournal (article/letter/editorial)
TitleTemperature dependent behavior of thermal conductivity of sub-5 nm Ir film: Defect-electron scattering quantified by residual thermal resistivity
JournalJournal of Applied Physics
AuthorsCheng, ZheAuthor
Xu, ZaoliAuthor
Xu, ShenAuthor
Wang, XinweiAuthor
Year2015 (January 14)Volume117
Issue2
PublisherAIP Publishing
DOIdoi:10.1063/1.4905607Search in ResearchGate
Generate Citation Formats
Mindat Ref. ID5201749Long-form Identifiermindat:1:5:5201749:2
GUID0
Full ReferenceCheng, Zhe, Xu, Zaoli, Xu, Shen, Wang, Xinwei (2015) Temperature dependent behavior of thermal conductivity of sub-5 nm Ir film: Defect-electron scattering quantified by residual thermal resistivity. Journal of Applied Physics, 117 (2). 24307pp. doi:10.1063/1.4905607
Plain TextCheng, Zhe, Xu, Zaoli, Xu, Shen, Wang, Xinwei (2015) Temperature dependent behavior of thermal conductivity of sub-5 nm Ir film: Defect-electron scattering quantified by residual thermal resistivity. Journal of Applied Physics, 117 (2). 24307pp. doi:10.1063/1.4905607
In(2015, January) Journal of Applied Physics Vol. 117 (2) AIP Publishing


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