Sometani, Mitsuru, Okamoto, Dai, Harada, Shinsuke, Ishimori, Hitoshi, Takasu, Shinji, Hatakeyama, Tetsuo, Takei, Manabu, Yonezawa, Yoshiyuki, Fukuda, Kenji, Okumura, Hajime (2015) Temperature-dependent analysis of conduction mechanism of leakage current in thermally grown oxide on 4H-SiC. Journal of Applied Physics, 117 (2). 24505pp. doi:10.1063/1.4905916
Reference Type | Journal (article/letter/editorial) | ||
---|---|---|---|
Title | Temperature-dependent analysis of conduction mechanism of leakage current in thermally grown oxide on 4H-SiC | ||
Journal | Journal of Applied Physics | ||
Authors | Sometani, Mitsuru | Author | |
Okamoto, Dai | Author | ||
Harada, Shinsuke | Author | ||
Ishimori, Hitoshi | Author | ||
Takasu, Shinji | Author | ||
Hatakeyama, Tetsuo | Author | ||
Takei, Manabu | Author | ||
Yonezawa, Yoshiyuki | Author | ||
Fukuda, Kenji | Author | ||
Okumura, Hajime | Author | ||
Year | 2015 (January 14) | Volume | 117 |
Issue | 2 | ||
Publisher | AIP Publishing | ||
DOI | doi:10.1063/1.4905916Search in ResearchGate | ||
Generate Citation Formats | |||
Mindat Ref. ID | 5201790 | Long-form Identifier | mindat:1:5:5201790:6 |
GUID | 0 | ||
Full Reference | Sometani, Mitsuru, Okamoto, Dai, Harada, Shinsuke, Ishimori, Hitoshi, Takasu, Shinji, Hatakeyama, Tetsuo, Takei, Manabu, Yonezawa, Yoshiyuki, Fukuda, Kenji, Okumura, Hajime (2015) Temperature-dependent analysis of conduction mechanism of leakage current in thermally grown oxide on 4H-SiC. Journal of Applied Physics, 117 (2). 24505pp. doi:10.1063/1.4905916 | ||
Plain Text | Sometani, Mitsuru, Okamoto, Dai, Harada, Shinsuke, Ishimori, Hitoshi, Takasu, Shinji, Hatakeyama, Tetsuo, Takei, Manabu, Yonezawa, Yoshiyuki, Fukuda, Kenji, Okumura, Hajime (2015) Temperature-dependent analysis of conduction mechanism of leakage current in thermally grown oxide on 4H-SiC. Journal of Applied Physics, 117 (2). 24505pp. doi:10.1063/1.4905916 | ||
In | (2015, January) Journal of Applied Physics Vol. 117 (2) AIP Publishing |
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