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Fu, Dong, Liu, Jietao, Zhu, Xi, Li, Jian, Xu, Yun, Song, Guofeng, Wei, Xin (2015) Exploring the effective photon management by InP nanoparticles: Broadband light absorption enhancement of InP/In0.53Ga0.47As/InP thin-film photodetectors. Journal of Applied Physics, 117 (20). 203102pp. doi:10.1063/1.4921587

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Reference TypeJournal (article/letter/editorial)
TitleExploring the effective photon management by InP nanoparticles: Broadband light absorption enhancement of InP/In0.53Ga0.47As/InP thin-film photodetectors
JournalJournal of Applied Physics
AuthorsFu, DongAuthor
Liu, JietaoAuthor
Zhu, XiAuthor
Li, JianAuthor
Xu, YunAuthor
Song, GuofengAuthor
Wei, XinAuthor
Year2015 (May 28)Volume117
Issue20
PublisherAIP Publishing
DOIdoi:10.1063/1.4921587Search in ResearchGate
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Mindat Ref. ID5201814Long-form Identifiermindat:1:5:5201814:5
GUID0
Full ReferenceFu, Dong, Liu, Jietao, Zhu, Xi, Li, Jian, Xu, Yun, Song, Guofeng, Wei, Xin (2015) Exploring the effective photon management by InP nanoparticles: Broadband light absorption enhancement of InP/In0.53Ga0.47As/InP thin-film photodetectors. Journal of Applied Physics, 117 (20). 203102pp. doi:10.1063/1.4921587
Plain TextFu, Dong, Liu, Jietao, Zhu, Xi, Li, Jian, Xu, Yun, Song, Guofeng, Wei, Xin (2015) Exploring the effective photon management by InP nanoparticles: Broadband light absorption enhancement of InP/In0.53Ga0.47As/InP thin-film photodetectors. Journal of Applied Physics, 117 (20). 203102pp. doi:10.1063/1.4921587
In(2015, May) Journal of Applied Physics Vol. 117 (20) AIP Publishing

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Fu, Dong, Liu, Jietao, Song, Jiakun, Yu, Hailong, Zhang, Zuyin, Wang, Wenbo, Xu, Yun, Song, Guofeng, Wei, Xin (2016) Coupled optical and electrical study of thin-film InGaAs photodetector integrated with surface InP Mie resonators. Journal of Applied Physics, 119 (10). 103103pp. doi:10.1063/1.4943166
Won, T., Morkoç, H. (1988) High‐speed performance of InP/In0.53Ga0.47As/InP double‐heterojunction bipolar transistors. Applied Physics Letters, 52 (7). 552-554 doi:10.1063/1.99414
Whitney, Peter S., Vlcek, James C., Fonstad, Clifton G. (1987) Thermionic currents and acceptor diffusion inp+‐In0.53Ga0.47As/n‐InP heterojunctions. Journal of Applied Physics, 62 (5). 1920-1924 doi:10.1063/1.339581
Lee, C. C., Fan, H. Y. (1972) Two‐Photon Absorption and Photoconductivity in GaAs and InP. Applied Physics Letters, 20 (1). 18-20 doi:10.1063/1.1653960
Zhang, Zongyi, Wu, Yonggang, Qin, Xuefei, Xia, Zihuan, Zhou, Jian (2020) Design of an InP/ZnO core–shell nanocone array solar cell with efficient broadband light absorption enhancement. Applied Optics, 59. 107pp. doi:10.1364/ao.59.000107
Towe, E. (1982) Photoluminescence of undoped In0.53Ga0.47As/InP grown by the vapor phase epitaxy technique. Journal of Applied Physics, 53 (7). 5136-5139 doi:10.1063/1.331349
Yamazaki, Susumu, Nakajima, Kazuo, Komiya, Satoshi, Kishi, Yutaka, Akita, Kenzo (1984) Misfit dislocations in (111)A InP/In0.53Ga0.47As/InP double heterostructure wafers grown by liquid phase epitaxy. Journal of Applied Physics, 55 (10). 3478-3484 doi:10.1063/1.332957
Otsuka, E. (1983) Absence of the Gunn effect inp‐In0.53Ga0.47As. Applied Physics Letters, 42 (4). 372-373 doi:10.1063/1.93943
Chan, P. T., Choy, H. S., Shu, C., Hsu, C. C. (1995) High‐performance InP/Ga0.47In0.53As/InP metal‐semiconductor‐metal photodetectors with a strained Al0.1In0.9P barrier enhancement layer. Applied Physics Letters, 67 (12). 1715-1717 doi:10.1063/1.115026
Augustine, G., Jokerst, N. M., Rohatgi, A. (1992) Single‐crystal thin film InP: Fabrication and absorption measurements. Applied Physics Letters, 61 (12). 1429-1431 doi:10.1063/1.107560
Forrest, S. R., Kim, O. K. (1981) Ann‐In0.53Ga0.47As/n‐InP rectifier. Journal of Applied Physics, 52 (9). 5838-5842 doi:10.1063/1.329479
 
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