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Johll, Harman, Samuel, Milla, Koo, Ruey Yi, Kang, Hway Chuan, Yeo, Yee-Chia, Tok, Eng Soon (2015) Influence of hydrogen surface passivation on Sn segregation, aggregation, and distribution in GeSn/Ge(001) materials. Journal of Applied Physics, 117 (20). 205302pp. doi:10.1063/1.4921594

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Reference TypeJournal (article/letter/editorial)
TitleInfluence of hydrogen surface passivation on Sn segregation, aggregation, and distribution in GeSn/Ge(001) materials
JournalJournal of Applied Physics
AuthorsJohll, HarmanAuthor
Samuel, MillaAuthor
Koo, Ruey YiAuthor
Kang, Hway ChuanAuthor
Yeo, Yee-ChiaAuthor
Tok, Eng SoonAuthor
Year2015 (May 28)Volume117
Issue20
PublisherAIP Publishing
DOIdoi:10.1063/1.4921594Search in ResearchGate
Generate Citation Formats
Mindat Ref. ID5201818Long-form Identifiermindat:1:5:5201818:1
GUID0
Full ReferenceJohll, Harman, Samuel, Milla, Koo, Ruey Yi, Kang, Hway Chuan, Yeo, Yee-Chia, Tok, Eng Soon (2015) Influence of hydrogen surface passivation on Sn segregation, aggregation, and distribution in GeSn/Ge(001) materials. Journal of Applied Physics, 117 (20). 205302pp. doi:10.1063/1.4921594
Plain TextJohll, Harman, Samuel, Milla, Koo, Ruey Yi, Kang, Hway Chuan, Yeo, Yee-Chia, Tok, Eng Soon (2015) Influence of hydrogen surface passivation on Sn segregation, aggregation, and distribution in GeSn/Ge(001) materials. Journal of Applied Physics, 117 (20). 205302pp. doi:10.1063/1.4921594
In(2015, May) Journal of Applied Physics Vol. 117 (20) AIP Publishing

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Johll, Harman, Lee, Michael Dao Kang, Ng, Sean Peng Nam, Kang, Hway Chuan, Tok, Eng Soon (2015) Influence of Interconfigurational Electronic States on Fe, Co, Ni-Silicene Materials Selection for Spintronics. Scientific Reports, 4. doi:10.1038/srep07594
Ong, Weijie, Tok, Eng Soon, Johll, Harman, Kang, Hway Chuan (2009) Self-assembly, dynamics, and structure of Si magic clusters. Physical Review B, 79 (23) doi:10.1103/physrevb.79.235439
Johll, Harman, Kang, Hway Chuan, Tok, Eng Soon (2009) Density functional theory study of Fe, Co, and Ni adatoms and dimers adsorbed on graphene. Physical Review B, 79 (24) doi:10.1103/physrevb.79.245416
Johll, Harman, Wu, Jiang, Ong, Sheau Wei, Kang, Hway Chuan, Tok, Eng Soon (2011) Graphene-adsorbed Fe, Co, and Ni trimers and tetramers: Structure, stability, and magnetic moment. Physical Review B, 83 (20) doi:10.1103/physrevb.83.205408
Wang, Wei, Zhou, Qian, Dong, Yuan, Tok, Eng Soon, Yeo, Yee-Chia (2015) Critical thickness for strain relaxation of Ge1−xSnx (x ≤ 0.17) grown by molecular beam epitaxy on Ge(001). Applied Physics Letters, 106 (23). 232106pp. doi:10.1063/1.4922529
Lei, Dian, Lee, Kwang Hong, Bao, Shuyu, Wang, Wei, Masudy-Panah, Saeid, Tan, Chuan Seng, Tok, Eng Soon, Gong, Xiao, Yeo, Yee-Chia (2017) Thermal stability of germanium-tin (GeSn) fins. Applied Physics Letters, 111 (25). 252103pp. doi:10.1063/1.5006994
Wang, Wei, Dong, Yuan, Zhou, Qian, Tok, Eng Soon, Yeo, Yee-Chia (2016) Germanium–tin interdiffusion in strained Ge/GeSn multiple-quantum-well structure. Journal of Physics D: Applied Physics, 49. 225102pp. doi:10.1088/0022-3727/49/22/225102
Wang, Wei, Li, Lingzi, Tok, Eng Soon, Yeo, Yee-Chia (2015) Self-assembly of tin wires via phase transformation of heteroepitaxial germanium-tin on germanium substrate. Journal of Applied Physics, 117 (22). 225304pp. doi:10.1063/1.4922423
Wang, Wei, Li, Lingzi, Zhou, Qian, Pan, Jisheng, Zhang, Zheng, Tok, Eng Soon, Yeo, Yee-Chia (2014) Tin surface segregation, desorption, and island formation during post-growth annealing of strained epitaxial Ge1−xSnx layer on Ge(001) substrate. Applied Surface Science, 321. 240-244 doi:10.1016/j.apsusc.2014.10.011
D'Costa, Vijay Richard, Wang, Wei, Zhou, Qian, Chan, Taw Kuei, Osipowicz, Thomas, Tok, Eng Soon, Yeo, Yee-Chia (2014) Compositional dependence of optical critical point parameters in pseudomorphic GeSn alloys. Journal of Applied Physics, 116 (5). 53520pp. doi:10.1063/1.4892105
Richard D’Costa, Vijay, Wang, Wei, Zhou, Qian, Soon Tok, Eng, Yeo, Yee-Chia (2014) Above-bandgap optical properties of biaxially strained GeSn alloys grown by molecular beam epitaxy. Applied Physics Letters, 104 (2). 22111pp. doi:10.1063/1.4862659
 
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