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(2015) Isotope analysis of diamond-surface passivation effect of high-temperature H2O-grown atomic layer deposition-Al2O3 films. Journal of Applied Physics, 117 (21). 215304pp. doi:10.1063/1.4921824

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Reference TypeJournal (article/letter/editorial)
TitleIsotope analysis of diamond-surface passivation effect of high-temperature H2O-grown atomic layer deposition-Al2O3 films
JournalJournal of Applied Physics
Year2015 (June 7)Volume117
Issue21
PublisherAIP Publishing
DOIdoi:10.1063/1.4921824Search in ResearchGate
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Mindat Ref. ID5201857Long-form Identifiermindat:1:5:5201857:0
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Full Reference(2015) Isotope analysis of diamond-surface passivation effect of high-temperature H2O-grown atomic layer deposition-Al2O3 films. Journal of Applied Physics, 117 (21). 215304pp. doi:10.1063/1.4921824
Plain Text(2015) Isotope analysis of diamond-surface passivation effect of high-temperature H2O-grown atomic layer deposition-Al2O3 films. Journal of Applied Physics, 117 (21). 215304pp. doi:10.1063/1.4921824
In(2015, June) Journal of Applied Physics Vol. 117 (21) AIP Publishing

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(2014) High-reliability passivation of hydrogen-terminated diamond surface by atomic layer deposition of Al2O3. Journal of Applied Physics, 115 (22). 223711pp. doi:10.1063/1.4881524
(2016) Effect of atomic layer deposition temperature on current conduction in Al2O3 films formed using H2O oxidant. Journal of Applied Physics, 120 (8). 84504pp. doi:10.1063/1.4961520
Yun, Sun Jin, Ko, Young-Wook, Lim, Jung Wook (2004) Passivation of organic light-emitting diodes with aluminum oxide thin films grown by plasma-enhanced atomic layer deposition. Applied Physics Letters, 85 (21). 4896-4898 doi:10.1063/1.1826238
Sun, Edward, Su, Fu-Hsiang, Chen, Ching-Huang, Chen, Miin-Jang (2010) Enhancement of photoluminescence intensity from Si nanodots using Al2O3 surface passivation layer grown by atomic layer deposition. Applied Surface Science, 256. 5021-5024 doi:10.1016/j.apsusc.2010.03.047
Huang, M. L., Chang, Y. C., Chang, C. H., Lee, Y. J., Chang, P., Kwo, J., Wu, T. B., Hong, M. (2005) Surface passivation of III-V compound semiconductors using atomic-layer-deposition-grown Al2O3. Applied Physics Letters, 87 (25). 252104pp. doi:10.1063/1.2146060
Jen, Shih-Hui, Bertrand, Jacob A., George, Steven M. (2011) Critical tensile and compressive strains for cracking of Al2O3 films grown by atomic layer deposition. Journal of Applied Physics, 109 (8). 84305pp. doi:10.1063/1.3567912
Shin, Byungha, Choi, Donghun, Harris, James S., McIntyre, Paul C. (2008) Pre-atomic layer deposition surface cleaning and chemical passivation of (100) In0.2Ga0.8As and deposition of ultrathin Al2O3 gate insulators. Applied Physics Letters, 93 (5). 52911pp. doi:10.1063/1.2966357
Chen, M. J., Shih, Y. T., Wu, M. K., Tsai, F. Y. (2007) Enhancement in the efficiency of light emission from silicon by a thin Al2O3 surface-passivating layer grown by atomic layer deposition at low temperature. Journal of Applied Physics, 101 (3). 33130pp. doi:10.1063/1.2464190
Tanimura, T., Watanabe, Y., Sato, Y., Kabe, Y., Hirota, Y. (2013) Effect of microwave plasma treatment on silicon dioxide films grown by atomic layer deposition at low temperature. Journal of Applied Physics, 113 (6). 64102pp. doi:10.1063/1.4790884
Ozaki, Yusuke, Kan, Daisuke, Shimakawa, Yuichi (2017) Influence of cation off-stoichiometry on structural and transport properties of (Ba,La)SnO3 epitaxial thin films grown by pulsed laser deposition. Journal of Applied Physics, 121 (21). 215304pp. doi:10.1063/1.4984317
Seguini, G., Cianci, E., Wiemer, C., Saynova, D., van Roosmalen, J. A. M., Perego, M. (2013) Si surface passivation by Al2O3 thin films deposited using a low thermal budget atomic layer deposition process. Applied Physics Letters, 102 (13). 131603pp. doi:10.1063/1.4800541
 
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