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Dong, Liang, Wang, Jin, Namburu, Raju, O'Regan, Terrance P., Dubey, Madan, Dongare, Avinash M. (2015) Edge effects on band gap energy in bilayer 2H-MoS2under uniaxial strain. Journal of Applied Physics, 117 (24). 244303pp. doi:10.1063/1.4922811

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Reference TypeJournal (article/letter/editorial)
TitleEdge effects on band gap energy in bilayer 2H-MoS2under uniaxial strain
JournalJournal of Applied Physics
AuthorsDong, LiangAuthor
Wang, JinAuthor
Namburu, RajuAuthor
O'Regan, Terrance P.Author
Dubey, MadanAuthor
Dongare, Avinash M.Author
Year2015 (June 28)Volume117
Issue24
PublisherAIP Publishing
DOIdoi:10.1063/1.4922811Search in ResearchGate
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Mindat Ref. ID5202024Long-form Identifiermindat:1:5:5202024:7
GUID0
Full ReferenceDong, Liang, Wang, Jin, Namburu, Raju, O'Regan, Terrance P., Dubey, Madan, Dongare, Avinash M. (2015) Edge effects on band gap energy in bilayer 2H-MoS2under uniaxial strain. Journal of Applied Physics, 117 (24). 244303pp. doi:10.1063/1.4922811
Plain TextDong, Liang, Wang, Jin, Namburu, Raju, O'Regan, Terrance P., Dubey, Madan, Dongare, Avinash M. (2015) Edge effects on band gap energy in bilayer 2H-MoS2under uniaxial strain. Journal of Applied Physics, 117 (24). 244303pp. doi:10.1063/1.4922811
In(2015, June) Journal of Applied Physics Vol. 117 (24) AIP Publishing

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Dong, Liang, Wang, Jin, Namburu, Raju, O'Regan, Terrance P., Dubey, Madan, Dongare, Avinash M. (2015) Erratum: “Edge effects on band gap energy in bilayer 2H-MoS2 under uniaxial strain” [J. Appl. Phys. 117, 244303 (2015)]. Journal of Applied Physics, 118 (18). 189904pp. doi:10.1063/1.4935944
Dong, Liang, Dongare, Avinash M., Namburu, Raju R., O'Regan, Terrance P., Dubey, Madan (2014) Theoretical study on strain induced variations in electronic properties of 2H-MoS2 bilayer sheets. Applied Physics Letters, 104 (5). 53107pp. doi:10.1063/1.4863827
Dong, Liang, Namburu, Raju R., O’Regan, Terrance P., Dubey, Madan, Dongare, Avinash M. (2014) Theoretical study on strain-induced variations in electronic properties of monolayer MoS2. Journal of Materials Science, 49. 6762-6771 doi:10.1007/s10853-014-8370-5
Wang, Jin, Namburu, Raju R., Dubey, Madan, Dongare, Avinash M. (2017) Origins of Ripples in CVD-Grown Few-layered MoS2 Structures under Applied Strain at Atomic Scales. Scientific Reports, 7. doi:10.1038/srep40862
Wang, Jin, Namburu, Raju, Dubey, Madan, Dongare, Avinash M. (2018) Origins of Moiré Patterns in CVD-grown MoS2 Bilayer Structures at the Atomic Scales. Scientific Reports, 8. doi:10.1038/s41598-018-27582-z
Dongare, Avinash M., Rajendran, Arunachalam M., Namburu, Raju, Dubey, Madan (2018) Understanding mechanical behavior of interfaces in materials. Journal of Materials Science, 53. 5511-5514 doi:10.1007/s10853-018-2030-0
Mackenchery, Karoon, Valisetty, Ramakrishna R., Namburu, Raju R., Stukowski, Alexander, Rajendran, Arunachalam M., Dongare, Avinash M. (2016) Dislocation evolution and peak spall strengths in single crystal and nanocrystalline Cu. Journal of Applied Physics, 119 (4). 44301pp. doi:10.1063/1.4939867
Yesilyurt, Can, Siu, Zhuo Bin, Tan, Seng Ghee, Liang, Gengchiau, Jalil, Mansoor B. A. (2017) Conductance modulation in Weyl semimetals with tilted energy dispersion without a band gap. Journal of Applied Physics, 121 (24). 244303pp. doi:10.1063/1.4989993
Lanzillo, Nicholas A., Glen Birdwell, A., Amani, Matin, Crowne, Frank J., Shah, Pankaj B., Najmaei, Sina, Liu, Zheng, Ajayan, Pulickel M., Lou, Jun, Dubey, Madan, Nayak, Saroj K., O'Regan, Terrance P. (2013) Temperature-dependent phonon shifts in monolayer MoS2. Applied Physics Letters, 103 (9). 93102pp. doi:10.1063/1.4819337
Najafi, Z., Ahmadkhan Kordbacheh, A., Afshar, M. (2016) Analysis of cooperative effects between uniaxial and torsional strains in carbon nanotubes. Journal of Applied Physics, 119 (24). 244303pp. doi:10.1063/1.4954225
Wang, Jin, Dongare, Avinash M. (2018) Density functional theory study of electronic structure of defects and the role on the strain relaxation behavior of MoS2 bilayer structures. Journal of Materials Science, 53. 9064-9075 doi:10.1007/s10853-018-2220-9
 
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